SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    Submit Your Paper

    Articles by keywords "epitaxy"

    The influence of Ar+and Cd+ ion implantation on the composition and electronic structure of monocrystalline zinc telluride

    Physical electronics
    Khujaniyozov J. B.Umirzakov B.Y.Tashmukhamedova D.A.Loboda V.V.Abduvayitov A. A.
    • Year: 2026
    • Volume: 19
    • Issue: 2
    • 9
    • 635
    • Pages: 84-97

    Room temperature microlasers based on quasi-planar geometry

    Optoelectronic and nanoelectronic devices
    Babichev A.V.Kovach Ya.N.Dragunova A.S.Makhov I.S.Kryzhanovskaya N.V.Zadiranov Y. M.Salii Yu.A.Kulagina M.M.Bobrov M.A.Vasil’ev A.P.Blokhin S.A.Maleev N.A.Karachinsky L.Ya.Novikov I.I.Egorov A.Yu.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 12
    • 836
    • Pages: 98-104

    Heterostructures with ultrathin InxGa1−xAs/GaAs(001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy

    Heterostructures, superlattices, quantum wells
    Lakuntsova O.E.Klimko G.V.Sedova I.V.Myasoedov A.V.Semenov A.Prasolov N.D.Sorokin S.V.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 13
    • 900
    • Pages: 39-44

    MBE growth of GaAs nanowires with a silicon rich particle on the top

    Condensed matter physics
    Sibirev N.V.Ilkiv I.V.Ubyivovk E.V.Soshnikov I.P.Shtrom I.V.Reznik R.R.Brukhanova V.V.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 4.1
    • 12
    • 1332
    • Pages: 62-66

    Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire

    Condensed matter physics
    Subbotina E.A.Subbotina A.S.Serov A.Yu.Filosofov N.G.Gridchin V.O.Sibirev N.V.Cirlin G.E.Shtrom I.V.
    • Year: 2025
    • Volume: 18
    • Issue: 4.1
    • 8
    • 1362
    • Pages: 44-48

    Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles

    Physical electronics
    Barantsev O.V.Vasilkova E.I.Pirogov E.V.Dementev P.A.Nevedomskiy V.N.Karachinsky L.Ya.Novikov I.I.Sobolev M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 15
    • 1385
    • Pages: 172-177

    Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces

    Atom physics and physics of clusters and nanostructures
    Balakirev S.V.Chernenko N.E.Shandyba N.A.Kirichenko D.V.Dukhan D.D.Eremenko M.M.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 7
    • 1367
    • Pages: 115-118

    Determination of the length of the 2×N superstructure during the synthesis of Ge on Si(001) at different temperatures

    Atom physics and physics of clusters and nanostructures
    Kukenov O.I.Dirko V.V.Lozovoy K.A.Maier X.A.Kokhanenko A.P.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 7
    • 1302
    • Pages: 91-95

    Localized Ga droplets formation on nanopatterned silicon substrates

    Condensed matter physics
    Eremenko M.M.Shandyba N.A.Chernenko N.E.Kirichenko D.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 7
    • 1339
    • Pages: 57-59

    Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

    Physical materials technology
    Shugabaev T.Kharchenko A.A.Dautov A.M.Kusnetsov A.Lendyashova V.V.Kryzhanovskaya N.V.Reznik R.R.Gridchin V.O.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 13
    • 1450
    • Pages: 278-282

    Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates

    Atom physics and physics of clusters and nanostructures
    Lendyashova V.V.Kotlyar K.P.Khrebtov A.I.Cirlin G.E.Ilkiv I.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 7
    • 1361
    • Pages: 152-155

    MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

    Atom physics and physics of clusters and nanostructures
    Andreeva A.S.Ilkiv I.V.Kotlyar K.P.Khrebtov A.I.Gridchin V.O.Cirlin G.E.Reznik R.R.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 10
    • 1446
    • Pages: 148-151

    Si-based photodetector with an Mg2Si contact layer for SWIR range

    Condensed matter physics
    Chernev I.M.Subbotin E.Yu.Kozlov A.G.Sinotova S.A.Prikhodchenko A.V.Lembikov A.O.Prokopeva G.A.Goroshko D.L.Galkin N.G.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 8
    • 1456
    • Pages: 53-58

    Influence of the growth regime on the transport properties of doped Mg2Si films

    Condensed matter physics
    Subbotin E.Yu.Udilov A.D.Prokopeva G.A.Goroshko D.L.Kozlov A.G.Chernev I.M.Lisenkov O.E.Khoroshilov D.A.Sinotova S.A.Galkin N.G.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 8
    • 1471
    • Pages: 40-43

    Synthesis of Mg2Si-based core-shell nanowires

    Condensed matter physics
    Subbotin E.Yu.Kozlov A.G.Pavlov Dmitrii V.Lisenkov O.E.Udilov A.D.Goroshko D.L.Poliakov M.V.Volkova L.S.Prokopeva G.A.Chernev I.M.Khoroshilov D.A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 18
    • 1445
    • Pages: 36-39

    Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Dukhan D.D.Chernenko N.E.Kirichenko D.V.Kugaevsky A.D.Makhov I.S.Kryzhanovskaya N.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 13
    • 1494
    • Pages: 19-22

    Infrared photodetectors based on InAsP epitaxial nanowires on silicon

    Condensed matter physics
    Goltaev A. S.Fedina S.V.Fedorov V.V.Mozharov A.M.Novikova K.N.Maksimova A.A.Baranov A.I.Kaveev A.K.Pavlov A.V.Miniv D.V.Ustimenko R.V.Vinnichenko M.Ya.Mukhin I.S.
    • Year: 2025
    • Volume: 18
    • Issue: 2
    • 56
    • 5208
    • Pages: 9-21

    Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Pugovkin A.A.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 8
    • 4688
    • Pages: 140-144

    Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

    Optoelectronic and nanoelectronic devices
    Gladyshev A.G.Andryushkin V.V.Kovach Ya.N.Babichev A.V.Voropaev K.O.Egorov A.Yu.Karachinsky L.Ya.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 28
    • 4609
    • Pages: 117-121

    Epitaxial growth AlGaAs from Bi-containing melts

    Structure growth, surface, and interfaces
    Khvostikova O.A.Kornienko P.D.Khvostikov V.P.Salii R.A.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 19
    • 4996
    • Pages: 17-21

    Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

    Physical materials technology
    Nikitina E.V.Shubina K.Yu.Sobolev M.S.Pirogov E.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 21
    • 3658
    • Pages: 275-278

    Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

    Physical electronics
    Barantsev O.V.Vasilkova E.I.Pirogov E.V.Shubina K.Yu.Baranov A.I.Voropaev K.O.Vasil’ev A.A.Karachinsky L.Ya.Novikov I.I.Sobolev M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 29
    • 3575
    • Pages: 182-186

    Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method

    Atom physics and physics of clusters and nanostructures
    Kukenov O.I.Dirko V.V.Lozovoy K.A.Kokhanenko A.P.Voitsekhovskii A.V.Maier X.A.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 14
    • 3543
    • Pages: 139-142

    Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode

    Simulation of physical processes
    Novikova K.N.Funtikova A.S.Mozharov A.M.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 24
    • 3578
    • Pages: 84-87

    Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating

    Condensed matter physics
    Papylev D.S.Kolodeznyi E.S.Babichev A.V.Kharin N.Yu.Voznyuk G.V.Mitrofanov M.I.Slipchenko S.O.Lyutetskii A.V.Evtikhiev V.P.Karachinsky L.Ya.Novikov I.I.Panevin V.Yu.Pikhtin N.A.Egorov A.Yu.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 22
    • 3613
    • Pages: 71-77

    Mg2Si synthesis on silicon crystals with different aspect ratio

    Condensed matter physics
    Subbotin E.Yu.Kozlov A.G.Goroshko D.L.Chernev I.M.Khoroshilov D.A.Lisenkov O.E.Zhizhchenko A.Yu.Kitan' S.A.Galkin N.G.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 27
    • 3759
    • Pages: 31-35

    Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

    Physical materials technology
    Shugabaev T.Gridchin V.O.Kusnetsov A.Kulagina A.S.Khrebtov A.I.Lendyashova V.V.Reznik R.R.Cirlin G.E.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 19
    • 4034
    • Pages: 306-309

    Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors

    Physical optics
    Babichev A.V.Papylev D.S.Komarov S.D.Kryzhanovskaya N.V.Blokhin S.A.Nevedomskiy V.N.Gladyshev A.G.Karachinsky L.Ya.Novikov I.I.Egorov A.Yu.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 25
    • 4024
    • Pages: 233-237

    Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy

    Simulation of physical processes
    Dukhan D.D.Balakirev S.V.Voloshina E.N.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 4096
    • Pages: 100-104

    Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

    Condensed matter physics
    Kirichenko D.V.Makhov I.S.Balakirev S.V.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 22
    • 3856
    • Pages: 79-83

    Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

    Condensed matter physics
    Chernenko N.E.Makhov I.S.Melnichenko I.A.Yakunina K.D.Balakirev S.V.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 16
    • 3919
    • Pages: 38-42

    Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 21
    • 3847
    • Pages: 28-33

    The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

    Physical materials technology
    Fedorov V.V.Fedina S.V.Kaveev A.K.Kirilenko D.A.Faleev N.N.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 2
    • 50
    • 5273
    • Pages: 120-133

    High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 16
    • 4339
    • Pages: 155-159

    Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

    Heterostructures, superlattices, quantum wells
    Chumanov I.V.Firsov D.D.Kolyada D.V.Komkov O.S.Skvortsov I.V.Mashanov V.I.Timofeev V.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 54
    • 4377
    • Pages: 62-67

    Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer

    Physical materials technology
    Lenshin A.S.Zolotukhin D.S.Seredin P.V.Mizerov A.M.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 18
    • 5080
    • Pages: 249-254

    Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

    Physical optics
    Babichev A.V.Nadtochiy A.M.Tkach Yu.S.Kryzhanovskaya N.V.Blokhin S.A.Nevedomskiy V.N.Gladyshev A.G.Maleev N.A.Karachinsky L.Ya.Novikov I.I.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 23
    • 5676
    • Pages: 50-55

    Germanium polytypes formation on AlGaAs nanowire surface

    Atom physics and physics of clusters and nanostructures
    Ilkiv I.V.Kotlyar K.P.Osipov A.V.Reznik R.R.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 16
    • 4991
    • Pages: 289-293

    Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

    Simulation of physical processes
    Dukhan D.D.Balakirev S.V.Voloshina E.N.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 13
    • 5356
    • Pages: 193-197

    Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs

    Condensed matter physics
    Eremenko M.M.Nikitina L.S.Jityaeva J.Yu.Lakhina E.A.Klimin V.S.Ageev O.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 24
    • 5202
    • Pages: 122-127

    Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns

    Condensed matter physics
    Kukenov O.I.Sokolov A.S.Dirko V.V.Lozovoy K.A.Kokhanenko A.P.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 22
    • 5197
    • Pages: 112-116

    Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties

    Condensed matter physics
    Chernev I.M.Subbotin E.Yu.Argunov E.V.Kozlov A.G.Gerasimenko A.V.Galkin N.G.Poliakov M.V.Volkova L.S.Dudin A.A.Gouralnik A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 61
    • 6407
    • Pages: 106-111

    Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 18
    • 5427
    • Pages: 79-83

    Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

    Condensed matter physics
    Kirichenko D.V.Chernenko N.E.Shandyba N.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 27
    • 5381
    • Pages: 74-78

    Properties of ultrathin epitaxial NbNx film on C-cut sapphire

    Condensed matter physics
    Shibalov M.V.Sirotina A.P.Pershina E.A.Shibalova A.A.Mumlyakov A.M.Porokhov N.V.Tarkhov M.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 12
    • 5409
    • Pages: 69-73

    Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

    Condensed matter physics
    Chernenko N.E.Makhov I.S.Balakirev S.V.Kirichenko D.V.Shandyba N.A.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 21
    • 5104
    • Pages: 64-68

    Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

    Condensed matter physics
    Lakhina E.A.Shandyba N.A.Chernenko N.E.Kirichenko D.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 40
    • 5982
    • Pages: 53-58

    Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations

    Condensed matter physics
    Balakirev S.V.Kirichenko D.V.Shandyba N.A.Chernenko N.E.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 21
    • 5380
    • Pages: 41-46

    Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique

    Structure growth, surface, and interfaces
    Amelchuk D.G.Mynbaeva M.G.Smirnov A.N.Davydov V.Yu.Lebedev S.P.Lebedev A.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 44
    • 5660
    • Pages: 39-43

    Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate

    Physical materials technology
    Bessolov V.N.Konenkova E.V.Rodin S.N.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 16
    • 5755
    • Pages: 224-228

    Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Reznik R.R.Kirilenko D.A.Baranov A.I.Dragunova A.S.Kryzhanovskaya N.V.Maksimova A.A.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 69
    • 6334
    • Pages: 179-184

    1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

    Physical optics
    Andryushkin V.V.Blokhin S.A.Bobrov M.A.Blokhin A.A.Babichev A.V.Gladyshev A.G.Novikov I.I.Karachinsky L.Ya.Kolodeznyi E.S.Voropaev K.O.Egorov A.Yu.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 29
    • 5832
    • Pages: 153-159

    1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

    Experimental technique and devices
    Rochas S.S.Blokhin S.A.Babichev A.V.Karachinsky L.Ya.Novikov I.I.Blokhin A.A.Bobrov M.A.Maleev N.A.Andryushkin V.V.Bougrov V.E.Gladyshev A.G.Melnichenko I.A.Voropaev K.O.Zhumaeva I.O.Ustinov V.M.Li H.Tian S.Han S.Sapunov G.A.Egorov A.Yu.Bimberg D.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 48
    • 6075
    • Pages: 456-462

    Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties

    Atom physics and physics of clusters and nanostructures
    Krichevtsov B.B.Korovin A.M.Suturin S.M.Sokolov N.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 15
    • 5600
    • Pages: 363-368

    Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

    Atom physics and physics of clusters and nanostructures
    Ilkiv I.V.Kotlyar K.P.Kirilenko D.A.Sharov V.A.Reznik R.R.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 31
    • 5987
    • Pages: 341-345

    Formation of a dielectric sublayer heterostructure of lead-tin telluride

    Condensed matter physics
    Kaveev A.K.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 21
    • 5690
    • Pages: 158-161

    Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

    Condensed matter physics
    Reznik R.R.Gridchin V.O.Kotlyar K.P.Dragunova A.S.Kryzhanovskaya N.V.Samsonenko Yu.B.Soshnikov I.P.Khrebtov A.I.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 27
    • 5691
    • Pages: 153-157

    Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

    Physical materials technology
    Balakirev S.V.Lakhina E.A.Kirichenko D.V.Chernenko N.E.Shandyba N.A.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 19
    • 6307
    • Pages: 315-319

    Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

    Physical materials technology
    Gridchin V.O.Reznik R.R.Kotlyar K.P.Shugabaev T.Dragunova A.S.Kryzhanovskaya N.V.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 32
    • 6411
    • Pages: 311-314

    Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Baranov A.I.Maksimova A.A.Reznik R.R.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 39
    • 6510
    • Pages: 281-284

    Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Uvarov A.V.Filatov V.V.Mizerov A.M.Timoshnev S.N.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 37
    • 6340
    • Pages: 157-162

    Study of FIB-modified silicon areas by AFM and Raman spectroscopy

    Condensed matter physics
    Nikitina L.S.Lakhina E.A.Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 23
    • 6245
    • Pages: 59-63

    Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

    Condensed matter physics
    Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 25
    • 6199
    • Pages: 54-58

    Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

    Condensed matter physics
    Chernenko N.E.Kirichenko D.V.Shandyba N.A.Balakirev S.V.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 21
    • 6316
    • Pages: 48-53

    Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

    Condensed matter physics
    Balakirev S.V.Kirichenko D.V.Chernenko N.E.Shandyba N.A.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 13
    • 6585
    • Pages: 42-47

    Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Eremenko M.M.Balakirev S.V.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 16
    • 6376
    • Pages: 36-41

    Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

    Condensed matter physics
    Reznik R.R.Gridchin V.O.Kotlyar K.P.Ubyivovk E.V.Dragunova A.S.Kryzhanovskaya N.V.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 26
    • 6664
    • Pages: 31-35

    Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

    Physical electronics
    Kazakin A.N.Enns Ya.B.Uvarov A.V.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 32
    • 6337
    • Pages: 145-149

    Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

    Atom physics and physics of clusters and nanostructures
    Lendyashova V.V.Ilkiv I.V.Borodin B.R.Ubyivovk E.V.Reznik R.R.Talalaev V.G.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 36
    • 6332
    • Pages: 75-79

    Influence of aluminum content in blocking layer  on properties of green InGaAlN LEDs

    Condensed matter physics
    Kornyshov G.O.Sakharov A.V.Nikolaev A.E.
    • Year: 2013
    • Issue: 4
    • 358
    • 10029
    • Pages: 31-36

    Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures

    Condensed matter physics
    Chernysheva E.A.Sakharov A.V.Cherkashin N.A.Lundin Vsevolod V.Tsatsulnikov A.F.
    • Year: 2012
    • Issue: 2
    • 0
    • 9735
    • Pages: 32-36

    The growth of gallium nitride layers with low dislocation density

    Condensed matter physics
    Mamaev V.V.Sidorov V.G.Petrov S.I.Alexeev A.N.
    • Year: 2012
    • Issue: 4
    • 1
    • 9713
    • Pages: 28-31