1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Physical optics
Authors:
Andryushkin Vladislav Blokhin Sergei A. Bobrov Mikhail A. Blokhin Aleksey A. Babichev Andrei V. Gladyshev Andrey G. Novikov Innokenty I. Karachinsky Leonid Ya. Kolodeznyi Evgenii S. Voropaev Kirill O. Egorov Anton Yu.
Abstract:

We present the comprehensive study of laser performance of 1300 nm wafer-fused vertical-cavity surface-emitting lasers. Lasers with 5µm buried tunnel junction diameter demonstrate a stable single mode operation in the wide temperature range with maximal output optical power of 6 mW and above 1.5 mW at 20 °C and 80 °C respectively. Based on small-signal analysis the maximal modulation frequency of 8 GHz at 20 °C was estimated. Further increase of the temperature up to 85 °C led to dropping of maximal small-signal modulation frequency down to ~6 GHz at -3dB level despite of remaining of rather high current modulation efficiency about ~2.7 GHz/mA0.5.