Latest issues
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1
- 2025,Volume 18Issue 4.1 Full text
- 2025,Volume 18Issue 4
1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission
- Year: 2023
- Volume: 16
- Issue: 1.2
- 25
- 5109
- Pages: 153-159
Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 4624
- Pages: 352-356
Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping
- Year: 2025
- Volume: 18
- Issue: 1.1
- 20
- 3943
- Pages: 117-121
Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 729
- Pages: 95-98
1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs
- Year: 2023
- Volume: 16
- Issue: 1.1
- 48
- 5360
- Pages: 456-462

