Latest issues
1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission
- Year: 2023
- Volume: 16
- Issue: 1.2
- 28
- 5700
- Pages: 153-159
Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes
- Year: 2023
- Volume: 16
- Issue: 3.1
- 32
- 5268
- Pages: 352-356
Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping
- Year: 2025
- Volume: 18
- Issue: 1.1
- 26
- 4485
- Pages: 117-121
Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 1281
- Pages: 95-98
1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs
- Year: 2023
- Volume: 16
- Issue: 1.1
- 48
- 5929
- Pages: 456-462

