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Vladislav V. Andryushkin
Affiliation
ITMO University
St. Petersburg, Russian Federation
1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs
- Year: 2023
- Volume: 16
- Issue: 1.1
- 48
- 5066
- Pages: 456-462
1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission
- Year: 2023
- Volume: 16
- Issue: 1.2
- 24
- 4760
- Pages: 153-159
Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 4274
- Pages: 352-356
Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping
- Year: 2025
- Volume: 18
- Issue: 1.1
- 17
- 3649
- Pages: 117-121
Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 422
- Pages: 95-98