Latest issues
Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots
- Year: 2022
- Volume: 15
- Issue: 3.2
- 62
- 7333
- Pages: 25-30
Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board
- Year: 2022
- Volume: 15
- Issue: 3.3
- 33
- 5795
- Pages: 163-166
The investigation of optical coupling of microlasers with tapered fiber
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 6450
- Pages: 167-170
Integrated optical transceiver based on III-V microdisk laser and photodiode
- Year: 2022
- Volume: 15
- Issue: 3.3
- 30
- 5928
- Pages: 371-375
Thermal characteristics of III-V microlasers bonded onto silicon board
- Year: 2023
- Volume: 16
- Issue: 1.2
- 36
- 5407
- Pages: 108-113
Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content
- Year: 2023
- Volume: 16
- Issue: 1.3
- 30
- 5089
- Pages: 182-187
Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes
- Year: 2023
- Volume: 16
- Issue: 3.1
- 30
- 5049
- Pages: 352-356
Vertical-cavity surface-emitting lasers for compact atomic sensors
- Year: 2023
- Volume: 16
- Issue: 3.2
- 34
- 5412
- Pages: 16-22
Room temperature microlasers based on quasi-planar geometry
- Year: 2026
- Volume: 19
- Issue: 1.1
- 7
- 459
- Pages: 98-104

