Latest issues
Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content
- Year: 2023
- Volume: 16
- Issue: 1.3
- 31
- 5329
- Pages: 182-187
Heterostructures with ultrathin InxGa1−xAs/GaAs (001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy
- Year: 2026
- Volume: 19
- Issue: 1.1
- 12
- 772
- Pages: 39-44

