Latest issues
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1
- 2025,Volume 18Issue 4.1 Full text
- 2025,Volume 18Issue 4
Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content
- Year: 2023
- Volume: 16
- Issue: 1.3
- 30
- 4739
- Pages: 182-187
Heterostructures with ultrathin InxGa1−xAs/GaAs (001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy
- Year: 2026
- Volume: 19
- Issue: 1.1
- 1
- 74
- Pages: 39-44

