Latest issues
- 2026,Volume 19Issue 2
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1
- 2025,Volume 18Issue 4.1 Full text
Articles from section "Heterostructures, superlattices, quantum wells "
Photoluminescence control of WSe₂ monolayers integrated with plasmon nanobumps via strain engineering
- Year: 2026
- Volume: 19
- Issue: 1.1
- 5
- 341
- Pages: 56-63
Photoluminescence and photoreflectance of long-wavelength HgTe/CdHgTe heterostructure
- Year: 2026
- Volume: 19
- Issue: 1.1
- 2
- 347
- Pages: 51-55
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 3
- 335
- Pages: 45-50
Heterostructures with ultrathin InxGa1−xAs/GaAs(001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy
- Year: 2026
- Volume: 19
- Issue: 1.1
- 6
- 375
- Pages: 39-44
Radiative recombination in InAs/InAsSb/InAsSbP heterostructures
- Year: 2026
- Volume: 19
- Issue: 1.1
- 2
- 328
- Pages: 33-38
Analysis of charge transport in a tunnel junction based on magnetic insulator CrCl3
- Year: 2025
- Volume: 18
- Issue: 1.1
- 22
- 4337
- Pages: 72-76
Effect of illumination on positive magnetoresistance of high-mobility two-dimensional electron gas in GaAs/AlAs heterostructure
- Year: 2025
- Volume: 18
- Issue: 1.1
- 12
- 4191
- Pages: 67-71
Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface
- Year: 2025
- Volume: 18
- Issue: 1.1
- 23
- 4339
- Pages: 58-66
Magnetic field effect on interface states in ZnSe/BeTe quantum well structures with no common atom
- Year: 2025
- Volume: 18
- Issue: 1.1
- 8
- 4268
- Pages: 52-57
Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content
- Year: 2025
- Volume: 18
- Issue: 1.1
- 24
- 4260
- Pages: 46-51
Polarized reflectance spectroscopy of aluminum nanoantennas on the surface of emitting GeSiSn/Si heterostructures
- Year: 2024
- Volume: 17
- Issue: 1.1
- 41
- 4028
- Pages: 83-88
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 3863
- Pages: 77-82
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 4466
- Pages: 68-76
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 52
- 3896
- Pages: 62-67
Effects of resonant tunneling in GaAs/AlAs heterostructure
- Year: 2024
- Volume: 17
- Issue: 1.1
- 57
- 4147
- Pages: 55-61
Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD
- Year: 2023
- Volume: 16
- Issue: 1.3
- 19
- 4864
- Pages: 90-95
Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm
- Year: 2023
- Volume: 16
- Issue: 1.3
- 18
- 4990
- Pages: 85-89
Modeling of coherent dynamics of excitons in a GaAs quantum well in the pump-probe experiment
- Year: 2023
- Volume: 16
- Issue: 1.3
- 23
- 4913
- Pages: 79-84
Investigation of infrared photoresponse from structure with GeSiSn/Si multiple quantum wells
- Year: 2023
- Volume: 16
- Issue: 1.3
- 24
- 4846
- Pages: 73-78
Magneto-intersuband resistance oscillations in a one-dimensional lateral superlattice
- Year: 2023
- Volume: 16
- Issue: 1.3
- 25
- 4792
- Pages: 67-72