SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
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    Year: 2026
    Volume: 19
    Issue: 1.1
    Pages: 169
    192
    12300
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    Photoluminescence and photoreflectance of annealed HgCdTe films with high CdTe content

    Bulk properties of semiconductors
    Balashov V.S.Ruzhevich M.S.Chumanov I.V.Firsov D.D.Komkov O.S.Mynbaev K.D.Remesnik V.G.Varavin V.S.Mikhailov N.N.
    • 14
    • 494
    • Pages: 6-11

    Electric field-induced anisotropy of absorption and refraction of terahertz radiation in n-InSb

    Bulk properties of semiconductors
    Ustimenko R.V.Shalygin V.A.Karaulov D.A.Norvatov I.A.Melentyev G.A.Vinnichenko M.Ya.Firsov D.A.
    • 6
    • 448
    • Pages: 12-20

    Lifetimes of electrons and holes in pure Si at temperature 40 mK

    Bulk properties of semiconductors
    Isakov I.D.Verbitskaya E.M.Eremin V.Fadeeva N.N.Eremin I.V.
    • 15
    • 468
    • Pages: 21-26

    The influence of diamond origin on the properties of NV centers

    Bulk properties of semiconductors
    Yakovleva V.V.Likhachev K.V.Muzafarova M.V.Babunts R.A.Baranov P.G.
    • 5
    • 481
    • Pages: 27-32

    Radiative recombination in InAs/InAsSb/InAsSbP heterostructures

    Heterostructures, superlattices, quantum wells
    Kirilenko I.D.Mynbaev K.D.Romanov V.V.Bazhenov N.L.Moiseev K.D.
    • 4
    • 431
    • Pages: 33-38

    Heterostructures with ultrathin InxGa1−xAs/GaAs (001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy

    Heterostructures, superlattices, quantum wells
    Lakuntsova O.E.Klimko G.V.Sedova I.V.Myasoedov A.V.Semenov A.Prasolov N.D.Sorokin S.V.
    • 8
    • 501
    • Pages: 39-44

    Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells

    Heterostructures, superlattices, quantum wells
    Chumanov I.V.Firsov D.D.Kolyada D.V.Komkov O.S.Skvortsov I.V.Mashanov V.I.Loshkarev I.D.Timofeev V.A.
    • 6
    • 456
    • Pages: 45-50

    Photoluminescence and photoreflectance of long-wavelength HgTe/CdHgTe heterostructure

    Heterostructures, superlattices, quantum wells
    Ruzhevich M.S.Mynbaev K.D.Firsov D.D.Chumanov I.V.Komkov O.S.Varavin V.S.Mikhailov N.N.
    • 3
    • 454
    • Pages: 51-55

    Photoluminescence control of WSe₂ monolayers integrated with plasmon nanobumps via strain engineering

    Heterostructures, superlattices, quantum wells
    Nikolaeva A.V.Anikina M.A.Pavlov Dmitrii V.Maksimov F.M.Kusnetsov A.Kondratev V.M.Sharov V.A.Kuchmizhak A.A.Bolshakov A.D.
    • 6
    • 445
    • Pages: 56-63

    Hybridization between the plasmonic modes of a graphene square screened by a metal gate and the Fabry-Pérot resonances in the barrier layer

    Quantum wires, quantum dots, and other low-dimensional systems
    Mashinsky K.V.Popov V.V.Fateev D.V.
    • 3
    • 418
    • Pages: 64-68

    Interband absorption and photoluminescence in lens-shaped quantum dots: an adiabatic approach

    Quantum wires, quantum dots, and other low-dimensional systems
    Gevorgyan D.G.Gavalajyan S.P.Vinnichenko M.Ya.Kazaryan E.M.
    • 3
    • 452
    • Pages: 69-74

    Role of the buffer layer on the mechanical strength of nanowire-substrate interface

    Quantum wires, quantum dots, and other low-dimensional systems
    Lutsevich M.A.Sharov V.A.Kaveev A.K.Fedorov V.V.Mukhin I.S.
    • 3
    • 420
    • Pages: 75-80

    Perovskite microwires generating red laser emission

    Quantum wires, quantum dots, and other low-dimensional systems
    Tatarinov D.A.Sapozhnikova E.V.Semyonov D.A.Pushkarev A.P.
    • 5
    • 481
    • Pages: 81-85

    Beam divergence of surface-emitting semiconductor laser with resonator based on two-dimensional photonic crystal

    Optoelectronic and nanoelectronic devices
    Nekrasov A.S.Zolotarev V.V.Oreshko I.V.Slipchenko S.O.Pikhtin N.A.
    • 4
    • 477
    • Pages: 86-91

    Band structure of PT-symmetric phononic crystals

    Optoelectronic and nanoelectronic devices
    Yashkin Z.M.Zakharchenko M.V.Glinsky G. F.
    • 7
    • 492
    • Pages: 92-97

    Room temperature microlasers based on quasi-planar geometry

    Optoelectronic and nanoelectronic devices
    Babichev A.V.Kovach Ya.N.Dragunova A.S.Makhov I.S.Kryzhanovskaya N.V.Zadiranov Y. M.Salii Yu.A.Kulagina M.M.Bobrov M.A.Vasil’ev A.P.Blokhin S.A.Maleev N.A.Karachinsky L.Ya.Novikov I.I.Egorov A.Yu.
    • 7
    • 452
    • Pages: 98-104

    Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs

    Optoelectronic and nanoelectronic devices
    Bobrov M.A.Blokhin S.A.Kovach Ya.N.Blokhin A.A.Maleev N.A.Kuzmenkov A.G.Marchiy M.N.Vasil’ev A.P.
    • 2
    • 469
    • Pages: 105-110

    Illumination and temperature dependence of optical interactions in multijunction solar cells

    Optoelectronic and nanoelectronic devices
    Kornienko P.D.Epoletov V.S.Levina S.A.Larionov V.R.Mintairov M.A.Nakhimovich M.V.Shvarts M.Z.
    • 6
    • 424
    • Pages: 111-116

    Prospects of hybrid bifacial four-junction solar cell for concentrating photovoltaics

    Optoelectronic and nanoelectronic devices
    Prudchenko K.К.Kontrosh E.V.Tolkachev I.A.Abolmasov S.N.Kalinovskii V.S.Terukov E.I.
    • 3
    • 467
    • Pages: 117-122

    Modeling the current-voltage characteristics and optimizing the laser-powered photovoltaic converters with a spot-type rear contact

    Optoelectronic and nanoelectronic devices
    Malevskaya A.D.Mintairov M.A.Evstropov V.V.Malevskiy D.A.Malevskaya A.V.Mintairov S.A.Kalyuzhniy N.A.
    • 1
    • 433
    • Pages: 123-128

    Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors

    Optoelectronic and nanoelectronic devices
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Rodin S.N.Tsatsulnikov A.F.
    • 2
    • 447
    • Pages: 129-133

    Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance

    Optoelectronic and nanoelectronic devices
    Safonov I.V.Svintsov D.A.
    • 4
    • 432
    • Pages: 134-140

    Time-resolved measurement of resistance

    Optoelectronic and nanoelectronic devices
    Vassilyev S.Ya.Khrapai V.S.Tikhonov E.S.
    • 9
    • 456
    • Pages: 141-145

    Investigation of self-hybridized waveguide exciton-polaritons in the two-dimensional antiferromagnet CrSBr at room temperature

    Novel materials
    Kalantaevskii I.E.Gorelkina T.D.Kravtsov V.A.
    • 6
    • 477
    • Pages: 146-150

    Second harmonic generation in iodine quasi-2D halide perovskite crystals

    Novel materials
    Sapozhnikova E.V.Semyonov D.A.Anoshkin S.S.Tatarinov D.A.Verkhogliadov G.A.Pushkarev A.P.
    • 5
    • 465
    • Pages: 151-155

    The role of charge carrier diffusion in halide perovskite luminophores with memory for optical computing

    Novel materials
    Ekgardt A.A.Sapozhnikova E.V.Verkhogliadov G.A.Pushkarev A.P.
    • 5
    • 430
    • Pages: 156-161

    Switching of Kerker effect from single Sb2Se3 nanoparticles

    Novel materials
    Kolesnikova A.R.Sinelnik A.D.Litvinov D.A.
    • 7
    • 430
    • Pages: 162-167