Latest issues
Ivan D. Loshkarev
Affiliation
Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS
Novosibirsk, Russian Federation
Investigation of infrared photoresponse from structure with GeSiSn/Si multiple quantum wells
- Year: 2023
- Volume: 16
- Issue: 1.3
- 24
- 4956
- Pages: 73-78
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 6
- 458
- Pages: 45-50

