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Ivan V. Chumanov
Affiliation
St. Petersburg Electrotechnical University "LETI"
St. Petersburg, Russian Federation
Temperature dependence of the energy spectrum of metamorphic InSb/In (Ga, Al) As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 32
- 4422
- Pages: 47-52
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 48
- 3400
- Pages: 62-67
Optical characteristics of Hg0.7Cd0.3Te films with etched graded-gap surface layer
- Year: 2025
- Volume: 18
- Issue: 1.1
- 23
- 3741
- Pages: 34-39
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 22
- 3643
- Pages: 105-110
Optical studies of InAs/InAsSb/InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 392
- Pages: 91-94