Ivan V. Chumanov
Ivan V. Chumanov
Affiliation
St. Petersburg Electrotechnical University "LETI"
St. Petersburg, Russian Federation

Temperature dependence of the energy spectrum of metamorphic InSb/In (Ga, Al) As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 34
  • 5194
  • Pages: 47-52

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 52
  • 4164
  • Pages: 62-67

Optical characteristics of Hg0.7Cd0.3Te films with etched graded-gap surface layer

Structure growth, surface, and interfaces
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 29
  • 4485
  • Pages: 34-39

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 28
  • 4369
  • Pages: 105-110

Optical studies of InAs/InAsSb/InAsSbP heterostructures

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 7
  • 1146
  • Pages: 91-94

Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells

Heterostructures, superlattices, quantum wells
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 10
  • 618
  • Pages: 45-50

Photoluminescence and photoreflectance of long-wavelength HgTe/CdHgTe heterostructure

Heterostructures, superlattices, quantum wells
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 8
  • 619
  • Pages: 51-55

Photoluminescence and photoreflectance of annealed HgCdTe films with high CdTe content

Bulk properties of semiconductors
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 21
  • 675
  • Pages: 6-11