Latest issues
- 2026, Volume 19 Issue 1
- 2025, Volume 18 Issue 4.1 Full text
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
Articles from section "Optoelectronic and nanoelectronic devices "
Silicon nanowire based sensorics of acids and bases
- Year: 2025
- Volume: 18
- Issue: 1.1
- 18
- 4012
- Pages: 145-151
Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 3935
- Pages: 140-144
Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures
- Year: 2025
- Volume: 18
- Issue: 1.1
- 8
- 3830
- Pages: 134-139
Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 9
- 3890
- Pages: 128-133
WOx/WS2 nanocomposites for room temperature gas sensors
- Year: 2025
- Volume: 18
- Issue: 1.1
- 19
- 3930
- Pages: 122-127
Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping
- Year: 2025
- Volume: 18
- Issue: 1.1
- 19
- 3851
- Pages: 117-121
Optimizing the front contact grid parameters of рhotovoltaic laser power converters
- Year: 2025
- Volume: 18
- Issue: 1.1
- 14
- 3821
- Pages: 111-116
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 22
- 3837
- Pages: 105-110
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 14
- 3925
- Pages: 100-104
Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 3925
- Pages: 165-170
Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 3930
- Pages: 160-164
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 14
- 3532
- Pages: 155-159
Photocurrent in MIS structures based on germanosilicate films
- Year: 2024
- Volume: 17
- Issue: 1.1
- 32
- 4046
- Pages: 149-154
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3539
- Pages: 143-148
Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load
- Year: 2024
- Volume: 17
- Issue: 1.1
- 37
- 3825
- Pages: 137-142
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 11
- 4884
- Pages: 176-181
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 29
- 4983
- Pages: 170-175
1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology
- Year: 2023
- Volume: 16
- Issue: 1.3
- 22
- 4660
- Pages: 163-169
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 4769
- Pages: 157-162
Optically controlled memristor based on ZrO2(Y) film with Au nanoparticles
- Year: 2023
- Volume: 16
- Issue: 1.3
- 37
- 5342
- Pages: 151-156
Stretchable carbon-nanotube films as opto-mechanically controllable modulators of terahertz radiation
- Year: 2023
- Volume: 16
- Issue: 1.3
- 10
- 4964
- Pages: 146-150