Articles from section "Optoelectronic and nanoelectronic devices "

Time-resolved measurement of resistance

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 10
  • 577
  • Pages: 141-145

Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 5
  • 568
  • Pages: 134-140

Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 5
  • 587
  • Pages: 129-133

Modeling the current-voltage characteristics and optimizing the laser-powered photovoltaic converters with a spot-type rear contact

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 2
  • 572
  • Pages: 123-128

Prospects of hybrid bifacial four-junction solar cell for concentrating photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 4
  • 612
  • Pages: 117-122

Illumination and temperature dependence of optical interactions in multijunction solar cells

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 7
  • 554
  • Pages: 111-116

Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 3
  • 630
  • Pages: 105-110

Room temperature microlasers based on quasi-planar geometry

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 8
  • 581
  • Pages: 98-104

Band structure of PT-symmetric phononic crystals

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 8
  • 644
  • Pages: 92-97

Beam divergence of surface-emitting semiconductor laser with resonator based on two-dimensional photonic crystal

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 6
  • 605
  • Pages: 86-91

Silicon nanowire based sensorics of acids and bases

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 20
  • 4567
  • Pages: 145-151

Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 7
  • 4467
  • Pages: 140-144

Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 10
  • 4335
  • Pages: 134-139

Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 9
  • 4442
  • Pages: 128-133

WOx/WS2 nanocomposites for room temperature gas sensors

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 20
  • 4464
  • Pages: 122-127

Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 24
  • 4379
  • Pages: 117-121

Optimizing the front contact grid parameters of рhotovoltaic laser power converters

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 15
  • 4315
  • Pages: 111-116

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 27
  • 4343
  • Pages: 105-110

Near-UV detectors based on ultrathin GaN epitaxial layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 16
  • 4459
  • Pages: 100-104

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 26
  • 4506
  • Pages: 165-170

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 30
  • 4533
  • Pages: 160-164

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 15
  • 4073
  • Pages: 155-159

Photocurrent in MIS structures based on germanosilicate films

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 32
  • 4591
  • Pages: 149-154

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 4079
  • Pages: 143-148

Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 38
  • 4409
  • Pages: 137-142

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 12
  • 5421
  • Pages: 176-181

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 29
  • 5502
  • Pages: 170-175

1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 22
  • 5166
  • Pages: 163-169

Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 5268
  • Pages: 157-162

Optically controlled memristor based on ZrO2(Y) film with Au nanoparticles

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 42
  • 5869
  • Pages: 151-156

Stretchable carbon-nanotube films as opto-mechanically controllable modulators of terahertz radiation

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 11
  • 5520
  • Pages: 146-150