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Articles from section "Optoelectronic and nanoelectronic devices "
Silicon nanowire based sensorics of acids and bases
- Year: 2025
- Volume: 18
- Issue: 1.1
- 8
- 456
- Pages: 145-151
Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 441
- Pages: 140-144
Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures
- Year: 2025
- Volume: 18
- Issue: 1.1
- 1
- 428
- Pages: 134-139
Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 5
- 457
- Pages: 128-133
WOx/WS2 nanocomposites for room temperature gas sensors
- Year: 2025
- Volume: 18
- Issue: 1.1
- 11
- 499
- Pages: 122-127
Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping
- Year: 2025
- Volume: 18
- Issue: 1.1
- 11
- 465
- Pages: 117-121
Optimizing the front contact grid parameters of рhotovoltaic laser power converters
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 445
- Pages: 111-116
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 451
- Pages: 105-110
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 4
- 446
- Pages: 100-104
Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters
- Year: 2024
- Volume: 17
- Issue: 1.1
- 20
- 2058
- Pages: 165-170
Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 2089
- Pages: 160-164
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 11
- 1892
- Pages: 155-159
Photocurrent in MIS structures based on germanosilicate films
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 2311
- Pages: 149-154
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 19
- 1869
- Pages: 143-148
Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load
- Year: 2024
- Volume: 17
- Issue: 1.1
- 33
- 1996
- Pages: 137-142
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 9
- 3027
- Pages: 176-181
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 27
- 3304
- Pages: 170-175
1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology
- Year: 2023
- Volume: 16
- Issue: 1.3
- 19
- 2980
- Pages: 163-169
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 3119
- Pages: 157-162
Optically controlled memristor based on ZrO2(Y) film with Au nanoparticles
- Year: 2023
- Volume: 16
- Issue: 1.3
- 29
- 3432
- Pages: 151-156
Stretchable carbon-nanotube films as opto-mechanically controllable modulators of terahertz radiation
- Year: 2023
- Volume: 16
- Issue: 1.3
- 9
- 3078
- Pages: 146-150