Latest issues
Articles from section "Optoelectronic and nanoelectronic devices "
Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance
- Year: 2026
- Volume: 19
- Issue: 1.1
- 5
- 562
- Pages: 134-140
Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors
- Year: 2026
- Volume: 19
- Issue: 1.1
- 4
- 579
- Pages: 129-133
Modeling the current-voltage characteristics and optimizing the laser-powered photovoltaic converters with a spot-type rear contact
- Year: 2026
- Volume: 19
- Issue: 1.1
- 2
- 566
- Pages: 123-128
Prospects of hybrid bifacial four-junction solar cell for concentrating photovoltaics
- Year: 2026
- Volume: 19
- Issue: 1.1
- 4
- 606
- Pages: 117-122
Illumination and temperature dependence of optical interactions in multijunction solar cells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 7
- 551
- Pages: 111-116
Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs
- Year: 2026
- Volume: 19
- Issue: 1.1
- 3
- 624
- Pages: 105-110
Room temperature microlasers based on quasi-planar geometry
- Year: 2026
- Volume: 19
- Issue: 1.1
- 8
- 576
- Pages: 98-104
Beam divergence of surface-emitting semiconductor laser with resonator based on two-dimensional photonic crystal
- Year: 2026
- Volume: 19
- Issue: 1.1
- 6
- 600
- Pages: 86-91
Silicon nanowire based sensorics of acids and bases
- Year: 2025
- Volume: 18
- Issue: 1.1
- 20
- 4562
- Pages: 145-151
Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 7
- 4462
- Pages: 140-144
Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures
- Year: 2025
- Volume: 18
- Issue: 1.1
- 10
- 4332
- Pages: 134-139
Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 9
- 4437
- Pages: 128-133
WOx/WS2 nanocomposites for room temperature gas sensors
- Year: 2025
- Volume: 18
- Issue: 1.1
- 19
- 4459
- Pages: 122-127
Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping
- Year: 2025
- Volume: 18
- Issue: 1.1
- 24
- 4376
- Pages: 117-121
Optimizing the front contact grid parameters of рhotovoltaic laser power converters
- Year: 2025
- Volume: 18
- Issue: 1.1
- 15
- 4311
- Pages: 111-116
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 27
- 4337
- Pages: 105-110
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 16
- 4457
- Pages: 100-104
Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 4499
- Pages: 165-170
Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation
- Year: 2024
- Volume: 17
- Issue: 1.1
- 30
- 4531
- Pages: 160-164
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 15
- 4067
- Pages: 155-159
Photocurrent in MIS structures based on germanosilicate films
- Year: 2024
- Volume: 17
- Issue: 1.1
- 32
- 4584
- Pages: 149-154
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 4072
- Pages: 143-148
Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load
- Year: 2024
- Volume: 17
- Issue: 1.1
- 38
- 4398
- Pages: 137-142
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 12
- 5415
- Pages: 176-181
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 29
- 5495
- Pages: 170-175
1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology
- Year: 2023
- Volume: 16
- Issue: 1.3
- 22
- 5162
- Pages: 163-169
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 5264
- Pages: 157-162
Optically controlled memristor based on ZrO2(Y) film with Au nanoparticles
- Year: 2023
- Volume: 16
- Issue: 1.3
- 42
- 5865
- Pages: 151-156
Stretchable carbon-nanotube films as opto-mechanically controllable modulators of terahertz radiation
- Year: 2023
- Volume: 16
- Issue: 1.3
- 11
- 5516
- Pages: 146-150

