SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
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    Latest issues

    Articles from section "Optoelectronic and nanoelectronic devices "

    Time-resolved measurement of resistance

    Optoelectronic and nanoelectronic devices
    Vassilyev S.Ya.Khrapai V.S.Tikhonov E.S.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 61
    • Pages: 141-145

    Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance

    Optoelectronic and nanoelectronic devices
    Safonov I.V.Svintsov D.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 2
    • 63
    • Pages: 134-140

    Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors

    Optoelectronic and nanoelectronic devices
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Rodin S.N.Tsatsulnikov A.F.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 57
    • Pages: 129-133

    Modeling the current-voltage characteristics and optimizing the laser-powered photovoltaic converters with a spot-type rear contact

    Optoelectronic and nanoelectronic devices
    Malevskaya A.D.Mintairov M.A.Evstropov V.V.Malevskiy D.A.Malevskaya A.V.Mintairov S.A.Kalyuzhniy N.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 61
    • Pages: 123-128

    Prospects of hybrid bifacial four-junction solar cell for concentrating photovoltaics

    Optoelectronic and nanoelectronic devices
    Prudchenko K.К.Kontrosh E.V.Tolkachev I.A.Abolmasov S.N.Kalinovskii V.S.Terukov E.I.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 57
    • Pages: 117-122

    Illumination and temperature dependence of optical interactions in multijunction solar cells

    Optoelectronic and nanoelectronic devices
    Kornienko P.D.Epoletov V.S.Levina S.A.Larionov V.R.Mintairov M.A.Nakhimovich M.V.Shvarts M.Z.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 2
    • 69
    • Pages: 111-116

    Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs

    Optoelectronic and nanoelectronic devices
    Bobrov M.A.Blokhin S.A.Kovach Ya.N.Blokhin A.A.Maleev N.A.Kuzmenkov A.G.Marchiy M.N.Vasil’ev A.P.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 64
    • Pages: 105-110

    Room temperature microlasers based on quasi-planar geometry

    Optoelectronic and nanoelectronic devices
    Babichev A.V.Kovach Ya.N.Dragunova A.S.Makhov I.S.Kryzhanovskaya N.V.Zadiranov Y. M.Salii Yu.A.Kulagina M.M.Bobrov M.A.Vasil’ev A.P.Blokhin S.A.Maleev N.A.Karachinsky L.Ya.Novikov I.I.Egorov A.Yu.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 1
    • 73
    • Pages: 98-104

    Band structure of PT-symmetric phononic crystals

    Optoelectronic and nanoelectronic devices
    Yashkin Z.M.Zakharchenko M.V.Glinsky G. F.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 1
    • 109
    • Pages: 92-97

    Beam divergence of surface-emitting semiconductor laser with resonator based on two-dimensional photonic crystal

    Optoelectronic and nanoelectronic devices
    Nekrasov A.S.Zolotarev V.V.Oreshko I.V.Slipchenko S.O.Pikhtin N.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 1
    • 66
    • Pages: 86-91

    Silicon nanowire based sensorics of acids and bases

    Optoelectronic and nanoelectronic devices
    Svinkin N.А.Kondratev V.M.Polozkov R.G.Novikova K.N.Zubov Fedor I.Mozharov A.M.Bolshakov A.D.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 19
    • 4112
    • Pages: 145-151

    Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Pugovkin A.A.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 7
    • 4030
    • Pages: 140-144

    Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

    Optoelectronic and nanoelectronic devices
    Cheng Y.Kamaev G.N.Popov A.A.Volodin V.A.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 9
    • 3923
    • Pages: 134-139

    Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs

    Optoelectronic and nanoelectronic devices
    Kovach Ya.N.Blokhin S.A.Bobrov M.A.Blokhin A.A.Maleev N.A.Vasil’ev A.P.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 9
    • 3988
    • Pages: 128-133

    WOx/WS2 nanocomposites for room temperature gas sensors

    Optoelectronic and nanoelectronic devices
    Zyryanova O.D.Nalimova S.S. Kondratev V.M.Bui C.D.Moshnikov V.A.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 19
    • 4028
    • Pages: 122-127

    Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

    Optoelectronic and nanoelectronic devices
    Gladyshev A.G.Andryushkin V.V.Kovach Ya.N.Babichev A.V.Voropaev K.O.Egorov A.Yu.Karachinsky L.Ya.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 20
    • 3943
    • Pages: 117-121

    Optimizing the front contact grid parameters of рhotovoltaic laser power converters

    Optoelectronic and nanoelectronic devices
    Malevskaya A.D.Mintairov M.A.Evstropov V.V.Malevskiy D.A.Malevskaya A.V.Kalyuzhniy N.A.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 15
    • 3918
    • Pages: 111-116

    Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

    Optoelectronic and nanoelectronic devices
    Kirilenko I.D.Ruzhevich M.S.Romanov V.V.Moiseev K.D.Dorogov M.V.Tomkovich M.V.Firsov D.D.Chumanov I.V.Komkov O.S.Mynbaev K.D.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 22
    • 3922
    • Pages: 105-110

    Near-UV detectors based on ultrathin GaN epitaxial layers

    Optoelectronic and nanoelectronic devices
    Shubina K.Yu.Sinitskaya O.A.Enns Ya.B.Mizerov A.M.Nikitina E.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 16
    • 4025
    • Pages: 100-104

    Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

    Optoelectronic and nanoelectronic devices
    Kalinovskii V.S.Maleev N.A.Vasil’ev A.P.Kontrosh E.V.Tolkachev I.A.Prudchenko K.К.Ustinov V.M.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 26
    • 4022
    • Pages: 165-170

    Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

    Optoelectronic and nanoelectronic devices
    Mikhaylov O.P.Baranov A.I.Gudovskikh A.S.Terukov E.I.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 27
    • 4029
    • Pages: 160-164

    High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 14
    • 3627
    • Pages: 155-159

    Photocurrent in MIS structures based on germanosilicate films

    Optoelectronic and nanoelectronic devices
    Hamoud G.Kamaev G.N.Vergnat M.Volodin V.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 32
    • 4148
    • Pages: 149-154

    Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

    Optoelectronic and nanoelectronic devices
    Kharin N.Yu.Panevin V.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 21
    • 3628
    • Pages: 143-148

    Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load

    Optoelectronic and nanoelectronic devices
    Nikolaeva A.V.Kondratev V.M.Kadinskaya S.A.Markina D.E.Lendyashova V.V.Dvoretckaia L.N. Monastyrenko A.O.Kochetkov F.M.Bolshakov A.D.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 37
    • 3922
    • Pages: 137-142

    Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

    Optoelectronic and nanoelectronic devices
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 11
    • 4981
    • Pages: 176-181

    Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

    Optoelectronic and nanoelectronic devices
    Ivanov A.E.Talnishnikh Nadezhda A.Chernyakov A.E.Zakgeim A.L.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 29
    • 5073
    • Pages: 170-175

    1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

    Optoelectronic and nanoelectronic devices
    Kovach Ya.N.Blokhin S.A.Babichev A.V.Bobrov M.A.Blokhin A.A.Gladyshev A.G.Novikov I.I.Karachinsky L.Ya.Voropaev K.O.Egorov A.Yu.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 22
    • 4753
    • Pages: 163-169

    Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

    Optoelectronic and nanoelectronic devices
    Karaborchev A.A.Makhov I.S.Maximov M.V.Kryzhanovskaya N.V.Zhukov A.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 26
    • 4869
    • Pages: 157-162

    Optically controlled memristor based on ZrO2(Y) film with Au nanoparticles

    Optoelectronic and nanoelectronic devices
    Ryabova M.A.Filatov D.O.Novikov A.S.Shenina M.E.Antonov I.N.Kotomina V.E.Liskin D.A.Ershov A.V.Gorshkov O.N.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 38
    • 5423
    • Pages: 151-156

    Stretchable carbon-nanotube films as opto-mechanically controllable modulators of terahertz radiation

    Optoelectronic and nanoelectronic devices
    Paukov M.I.Starchenko V.V.Krasnikov D.V.Zhukov S.S.Gorshunov B.P.Nasibulin A.G.Arsenin А.V.Volkov V.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 10
    • 5074
    • Pages: 146-150