SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles from section "Optoelectronic and nanoelectronic devices "

Silicon nanowire based sensorics of acids and bases

Optoelectronic and nanoelectronic devices
Svinkin N.А. Kondratev V.M. Polozkov R.G. Novikova K.N. Zubov Fedor I. Mozharov A.M. Bolshakov A.D.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 9
  • 523
  • Pages: 145-151

Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

Optoelectronic and nanoelectronic devices
Soldatenkov F.Yu. Pugovkin A.A. Ivanov A.E. Malevskiy D.A. Levin S.V.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 6
  • 498
  • Pages: 140-144

Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

Optoelectronic and nanoelectronic devices
Cheng Y. Kamaev G.N. Popov A.A. Volodin V.A.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 1
  • 488
  • Pages: 134-139

Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
Kovach Ya.N. Blokhin S.A. Bobrov M.A. Blokhin A.A. Maleev N.A. Vasil’ev A.P.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 5
  • 508
  • Pages: 128-133

WOx/WS2 nanocomposites for room temperature gas sensors

Optoelectronic and nanoelectronic devices
Zyryanova O.D. Nalimova S.S. Kondratev V.M. Bui C.D. Moshnikov V.A.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 11
  • 561
  • Pages: 122-127

Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

Optoelectronic and nanoelectronic devices
Gladyshev A.G. Andryushkin V.V. Kovach Ya.N. Babichev A.V. Voropaev K.O. Egorov A.Yu. Karachinsky L.Ya.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 11
  • 517
  • Pages: 117-121

Optimizing the front contact grid parameters of рhotovoltaic laser power converters

Optoelectronic and nanoelectronic devices
Malevskaya A.D. Mintairov M.A. Evstropov V.V. Malevskiy D.A. Malevskaya A.V. Kalyuzhniy N.A.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 6
  • 496
  • Pages: 111-116

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
Kirilenko I.D. Ruzhevich M.S. Romanov V.V. Moiseev K.D. Dorogov M.V. Tomkovich M.V. Firsov D.D. Chumanov I.V. Komkov O.S. Mynbaev K.D.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 6
  • 505
  • Pages: 105-110

Near-UV detectors based on ultrathin GaN epitaxial layers

Optoelectronic and nanoelectronic devices
Shubina K.Yu. Sinitskaya O.A. Enns Ya.B. Mizerov A.M. Nikitina E.V.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 4
  • 504
  • Pages: 100-104

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
Kalinovskii V.S. Maleev N.A. Vasil’ev A.P. Kontrosh E.V. Tolkachev I.A. Prudchenko K.К. Ustinov V.M.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 2111
  • Pages: 165-170

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
Mikhaylov O.P. Baranov A.I. Gudovskikh A.S. Terukov E.I.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 2157
  • Pages: 160-164

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
Soldatenkov F.Yu. Ivanov A.E. Malevskiy D.A. Levin S.V.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 11
  • 1954
  • Pages: 155-159

Photocurrent in MIS structures based on germanosilicate films

Optoelectronic and nanoelectronic devices
Hamoud G. Kamaev G.N. Vergnat M. Volodin V.A.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 2368
  • Pages: 149-154

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
Kharin N.Yu. Panevin V.Yu. Vinnichenko M.Ya. Norvatov I.A. Fedorov V.V. Firsov D.A.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 1918
  • Pages: 143-148

Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load

Optoelectronic and nanoelectronic devices
Nikolaeva A.V. Kondratev V.M. Kadinskaya S.A. Markina D.E. Lendyashova V.V. Dvoretckaia L.N. Monastyrenko A.O. Kochetkov F.M. Bolshakov A.D.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 33
  • 2073
  • Pages: 137-142

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 9
  • 3094
  • Pages: 176-181

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
Ivanov A.E. Talnishnikh Nadezhda A. Chernyakov A.E. Zakgeim A.L.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 27
  • 3359
  • Pages: 170-175

1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

Optoelectronic and nanoelectronic devices
Kovach Ya.N. Blokhin S.A. Babichev A.V. Bobrov M.A. Blokhin A.A. Gladyshev A.G. Novikov I.I. Karachinsky L.Ya. Voropaev K.O. Egorov A.Yu.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 20
  • 3038
  • Pages: 163-169

Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

Optoelectronic and nanoelectronic devices
Karaborchev A.A. Makhov I.S. Maximov M.V. Kryzhanovskaya N.V. Zhukov A.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 3173
  • Pages: 157-162

Optically controlled memristor based on ZrO2(Y) film with Au nanoparticles

Optoelectronic and nanoelectronic devices
Ryabova M.A. Filatov D.O. Novikov A.S. Shenina M.E. Antonov I.N. Kotomina V.E. Liskin D.A. Ershov A.V. Gorshkov O.N.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 29
  • 3500
  • Pages: 151-156

Stretchable carbon-nanotube films as opto-mechanically controllable modulators of terahertz radiation

Optoelectronic and nanoelectronic devices
Paukov M.I. Starchenko V.V. Krasnikov D.V. Zhukov S.S. Gorshunov B.P. Nasibulin A.G. Arsenin А.V. Volkov V.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 9
  • 3151
  • Pages: 146-150