Latest issues
- 2026, Volume 19 Issue 1
- 2025, Volume 18 Issue 4.1 Full text
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
Olesya A. Sinitskaya
Affiliation
Alferov University
St. Petersburg, Russian Federation
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 36
- 5317
- Pages: 157-162
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 4179
- Pages: 133-137
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 4024
- Pages: 439-443
GaN based ultraviolet narrowband photodetectors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 16
- 2869
- Pages: 220-223
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 11
- 3699
- Pages: 100-104
High-sensitivity and low-noise GaN-based ultraviolet photodetectors
- Year: 2025
- Volume: 18
- Issue: 3.2
- 2
- 340
- Pages: 196-199