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- 2026,Volume 19Issue 1 Full text
Maxim S. Sobolev
Affiliation
Alferov University
St. Petersburg, Russian Federation
Publications
Orcid ID
0000-0001-8629-2064Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 5231
- Pages: 133-137
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
- Year: 2024
- Volume: 17
- Issue: 3.2
- 31
- 3718
- Pages: 182-186
Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 3794
- Pages: 275-278
Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles
- Year: 2025
- Volume: 18
- Issue: 3.2
- 17
- 1534
- Pages: 172-177

