SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorKirill O. Voropaev
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    Latest issues
    Kirill O. Voropaev
    Kirill O. Voropaev
    Affiliation
    JSC OKB-Planeta
    V. Novgorod, Russian Federation

    1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

    Physical optics
    Andryushkin V.V.Blokhin S.A.Bobrov M.A.Blokhin A.A.Babichev A.V.Gladyshev A.G.Novikov I.I.Karachinsky L.Ya.Kolodeznyi E.S.Voropaev K.O.Egorov A.Yu.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 25
    • 5109
    • Pages: 153-159

    1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

    Optoelectronic and nanoelectronic devices
    Kovach Ya.N.Blokhin S.A.Babichev A.V.Bobrov M.A.Blokhin A.A.Gladyshev A.G.Novikov I.I.Karachinsky L.Ya.Voropaev K.O.Egorov A.Yu.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 22
    • 4753
    • Pages: 163-169

    Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice

    Physical optics
    Kovach Ya.N.Blokhin S.A.Bobrov M.A.Blokhin A.A.Maleev N.A.Kuzmenkov A.G.Novikov I.I.Karachinsky L.Ya.Voropaev K.O.Egorov A.Yu.Ustinov V.M.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 38
    • 4980
    • Pages: 9-15

    Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

    Physical electronics
    Barantsev O.V.Vasilkova E.I.Pirogov E.V.Shubina K.Yu.Baranov A.I.Voropaev K.O.Vasil’ev A.A.Karachinsky L.Ya.Novikov I.I.Sobolev M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 25
    • 2895
    • Pages: 182-186

    Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

    Optoelectronic and nanoelectronic devices
    Gladyshev A.G.Andryushkin V.V.Kovach Ya.N.Babichev A.V.Voropaev K.O.Egorov A.Yu.Karachinsky L.Ya.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 20
    • 3943
    • Pages: 117-121

    1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs

    Experimental technique and devices
    Rochas S.S.Blokhin S.A.Babichev A.V.Karachinsky L.Ya.Novikov I.I.Blokhin A.A.Bobrov M.A.Maleev N.A.Andryushkin V.V.Bougrov V.E.Gladyshev A.G.Melnichenko I.A.Voropaev K.O.Zhumaeva I.O.Ustinov V.M.Li H.Tian S.Han S.Sapunov G.A.Egorov A.Yu.Bimberg D.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 48
    • 5360
    • Pages: 456-462