Mikhail A. Bobrov
Mikhail A. Bobrov
Affiliation
Ioffe Institute
St. Petersburg, Russian Federation

1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 28
  • 5705
  • Pages: 153-159

1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 24
  • 5281
  • Pages: 163-169

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 32
  • 5276
  • Pages: 352-356

Vertical-cavity surface-emitting lasers for compact atomic sensors

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 35
  • 5651
  • Pages: 16-22

Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 39
  • 5559
  • Pages: 9-15

Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 10
  • 4557
  • Pages: 128-133

1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 48
  • 5938
  • Pages: 456-462

Room temperature microlasers based on quasi-planar geometry

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 10
  • 716
  • Pages: 98-104

Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 4
  • 771
  • Pages: 105-110