Latest issues
- 2026,Volume 19Issue 3
- 2026,Volume 19Issue 2
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1 Full text
1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission
- Year: 2023
- Volume: 16
- Issue: 1.2
- 29
- 5943
- Pages: 153-159
1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 5481
- Pages: 163-169
Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice
- Year: 2023
- Volume: 16
- Issue: 3.2
- 39
- 5785
- Pages: 9-15
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
- Year: 2023
- Volume: 16
- Issue: 3.2
- 24
- 5774
- Pages: 50-55
Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 25
- 4129
- Pages: 233-237
Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating
- Year: 2024
- Volume: 17
- Issue: 3.2
- 22
- 3720
- Pages: 71-77
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
- Year: 2024
- Volume: 17
- Issue: 3.2
- 31
- 3705
- Pages: 182-186
Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles
- Year: 2025
- Volume: 18
- Issue: 3.2
- 17
- 1524
- Pages: 172-177
1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs
- Year: 2023
- Volume: 16
- Issue: 1.1
- 48
- 6175
- Pages: 456-462
Room temperature microlasers based on quasi-planar geometry
- Year: 2026
- Volume: 19
- Issue: 1.1
- 15
- 943
- Pages: 98-104

