SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorArtem I. I. Baranov
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    Latest issues
    Artem I. I. Baranov
    Artem I. I. Baranov
    Affiliation
    Alferov University
    St. Petersburg, Russian Federation
    Publications
    Orcid ID
    0000-0002-4894-6503

    Study of recombination and transport properties of a-Si:H (i)/ μc-Si:H (n) contact system for crystalline silicon solar cells

    Physical electronics
    Uvarov A.V.Baranov A.I.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 18
    • 6176
    • Pages: 150-154

    Plasma deposited indium phosphide and its electrophysical properties

    Physical electronics
    Maksimova A.A.Uvarov A.V.Kirilenko D.A.Baranov A.I.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 45
    • 7137
    • Pages: 123-127

    Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Baranov A.I.Maksimova A.A.Reznik R.R.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 39
    • 6382
    • Pages: 281-284

    Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Reznik R.R.Kirilenko D.A.Baranov A.I.Dragunova A.S.Kryzhanovskaya N.V.Maksimova A.A.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 69
    • 6195
    • Pages: 179-184

    Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

    Heterostructures, superlattices, quantum wells
    Kiianitsyn S.Yu.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 20
    • 5202
    • Pages: 90-95

    Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

    Optoelectronic and nanoelectronic devices
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 14
    • 5521
    • Pages: 176-181

    Flexible solar cells based on PEDOT: PSS and vertically aligned silicon structures

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Neplokh V.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 52
    • 6127
    • Pages: 10-17

    Heterojunction solar cells based on nanostructured black silicon

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 19
    • 5129
    • Pages: 434-438

    Capacitance-voltage characterization of BP layers grown by PECVD mode

    Physical electronics
    Vtorygin G.E.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 23
    • 4932
    • Pages: 473-478

    Boron phosphide grown by PECVD and its optical properties

    Physical materials technology
    Maksimova A.A.Uvarov A.V.Pozdeev V.A.Kirilenko D.A.Baranov A.I.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 37
    • 5548
    • Pages: 273-277

    Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

    Optoelectronic and nanoelectronic devices
    Mikhaylov O.P.Baranov A.I.Gudovskikh A.S.Terukov E.I.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 33
    • 4651
    • Pages: 160-164

    Gallium phosphide/black silicon heterojunction solar cells

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 26
    • 3628
    • Pages: 199-203

    GaN based ultraviolet narrowband photodetectors

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Baranov A.I.Mizerov A.M.Nikitina E.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 24
    • 3751
    • Pages: 220-223

    Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

    Physics of molecules, clusters and nanostructures
    Maksimova A.A.Uvarov A.V.Vyacheslavova E.A.Baranov A.I.Yarchuk E.YGudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 20
    • 3224
    • Pages: 152-156

    Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

    Physical electronics
    Barantsev O.V.Vasilkova E.I.Pirogov E.V.Shubina K.Yu.Baranov A.I.Voropaev K.O.Vasil’ev A.A.Karachinsky L.Ya.Novikov I.I.Sobolev M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 29
    • 3451
    • Pages: 182-186

    Degradation of solar heterostructured cells under the influence of electron flow

    Physical optics
    Mikhaylov O.P.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.Shvarts M.Z.Terukov E.I.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 15
    • 3249
    • Pages: 251-255

    Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

    Condensed matter physics
    Baranov A.I.Vtorygin G.E.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3
    • 27
    • 4335
    • Pages: 17-24

    Infrared photodetectors based on InAsP epitaxial nanowires on silicon

    Condensed matter physics
    Goltaev A. S.Fedina S.V.Fedorov V.V.Mozharov A.M.Novikova K.N.Maksimova A.A.Baranov A.I.Kaveev A.K.Pavlov A.V.Miniv D.V.Ustimenko R.V.Vinnichenko M.Ya.Mukhin I.S.
    • Year: 2025
    • Volume: 18
    • Issue: 2
    • 55
    • 5057
    • Pages: 9-21

    Black silicon formation using cryogenic etching and photoresist layer

    Physical electronics
    Vyacheslavova E.A.Mokhov D.V.Uvarov A.V.Maksimova A.A.Mikhaylov O.P.Baranov A.I.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 8
    • 1327
    • Pages: 182-186

    Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures

    Physical materials technology
    Uvarov A.V.Baranov A.I.Maksimova A.A.Vyacheslavova E.A.Pozdeev V.A.Mikhaylov O.P.Nikitina E.V.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 8
    • 1325
    • Pages: 247-251

    Capacitance characterization of GaN/InP multilayer structures

    Physical materials technology
    Mikhaylov O.P.Baranov A.I.Pozdeev V.A.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 10
    • 1200
    • Pages: 258-262

    Temperature effects on the light current-voltage characteristics of the heterojunction solar cells fabricated on gallium-doped silicon substrates

    Condensed matter physics
    Ataboev O.K.Utamuradova S.B.Terukov E.I.Baranov A.I.Iniyatova K.Kh.
    • Year: 2026
    • Volume: 19
    • Issue: 1
    • 23
    • 1077
    • Pages: 30-42