SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
Version for the visually impaired
Author George E. Cirlin
Submit Your Paper
Latest issues
George E. Cirlin
George E. Cirlin

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
Lendyashova V.V. Ilkiv I.V. Borodin B.R. Ubyivovk E.V. Reznik R.R. Talalaev V.G. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 32
  • 5378
  • Pages: 75-79

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
Reznik R.R. Gridchin V.O. Kotlyar K.P. Ubyivovk E.V. Dragunova A.S. Kryzhanovskaya N.V. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 5670
  • Pages: 31-35

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Baranov A.I. Maksimova A.A. Reznik R.R. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 38
  • 5609
  • Pages: 281-284

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
Gridchin V.O. Reznik R.R. Kotlyar K.P. Shugabaev T. Dragunova A.S. Kryzhanovskaya N.V. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 32
  • 5515
  • Pages: 311-314

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
Reznik R.R. Gridchin V.O. Kotlyar K.P. Dragunova A.S. Kryzhanovskaya N.V. Samsonenko Yu.B. Soshnikov I.P. Khrebtov A.I. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 25
  • 4767
  • Pages: 153-157

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
Komarov S.D. Gridchin V.O. Lendyashova V.V. Kotlyar K.P. Reznik R.R. Dvoretskaya N.V. Dragunova A.S. Makhov I.S. Nadtochiy A.M. Kryzhanovskaya N.V. Cirlin G.E. Zhukov A.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 48
  • 5067
  • Pages: 114-120

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Reznik R.R. Kirilenko D.A. Baranov A.I. Dragunova A.S. Kryzhanovskaya N.V. Maksimova A.A. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 66
  • 5369
  • Pages: 179-184

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
Ilkiv I.V. Kotlyar K.P. Osipov A.V. Reznik R.R. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 4073
  • Pages: 289-293

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
Shugabaev T. Gridchin V.O. Reznik R.R. Khrebtov A.I. Melnichenko I.A. Kulagina A.S. Kotlyar K.P. Lendyashova V.V. Kryzhanovskaya N.V. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 13
  • 4282
  • Pages: 255-260

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
Ilkiv I.V. Kotlyar K.P. Kirilenko D.A. Sharov V.A. Reznik R.R. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 30
  • 5107
  • Pages: 341-345

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
Shugabaev T. Gridchin V.O. Kusnetsov A. Kulagina A.S. Khrebtov A.I. Lendyashova V.V. Reznik R.R. Cirlin G.E.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 3077
  • Pages: 306-309

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
Gridchin V.O. Shugabaev T. Lendyashova V.V. Kotlyar K.P. Khrebtov A.I. Dragunova A.S. Kryzhanovskaya N.V. Reznik R.R. Cirlin G.E.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 17
  • 2396
  • Pages: 143-147

Growth of GaN nanowires with InN inserts by PA-MBE

Atom physics and physics of clusters and nanostructures
Gridchin V.O. Mintairov A.M. Shugabaev T. Axenov V.Yu. Vlasov A.S. Lendyashova V.V. Kotlyar K.P. Eliseev I.A. Khrebtov A.I. Reznik R.R. Davydov V.Yu. Cirlin G.E.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 3
  • 433
  • Pages: 139-142

MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

Atom physics and physics of clusters and nanostructures
Andreeva A.S. Ilkiv I.V. Kotlyar K.P. Khrebtov A.I. Gridchin V.O. Cirlin G.E. Reznik R.R.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 6
  • 488
  • Pages: 148-151

Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si (111) substrates

Atom physics and physics of clusters and nanostructures
Lendyashova V.V. Kotlyar K.P. Khrebtov A.I. Cirlin G.E. Ilkiv I.V.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 4
  • 432
  • Pages: 152-155

Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

Physical materials technology
Shugabaev T. Kharchenko A.A. Dautov A.M. Kusnetsov A. Lendyashova V.V. Kryzhanovskaya N.V. Reznik R.R. Gridchin V.O. Cirlin G.E.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 4
  • 436
  • Pages: 278-282

MBE growth of GaAs nanowires with a silicon rich particle on the top

Condensed matter physics
Sibirev N.V. Ilkiv I.V. Ubyivovk E.V. Soshnikov I.P. Shtrom I.V. Reznik R.R. Brukhanova V.V. Cirlin G.E.
  • Year: 2025
  • Volume: 18
  • Issue: 4.1
  • 3
  • 327
  • Pages: 62-66

Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire

Condensed matter physics
Subbotina E.A. Subbotina A.S. Serov A.Yu. Filosofov N.G. Gridchin V.O. Sibirev N.V. Cirlin G.E. Shtrom I.V.
  • Year: 2025
  • Volume: 18
  • Issue: 4.1
  • 2
  • 328
  • Pages: 44-48