Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
Authors:
Cirlin George E. Bondarenko Dariya N. Gridchin Vladislav O. Kotlyar Konstantin P. Baranov Artem I. Maksimova Alina A. Reznik Rodion R.
Abstract:

The paper presents an approach to growth of GaN nanowires with thick core-shell InGaN insertions with a high indium content for creation of LED structure. The study of the electrical properties shows typical diode dependence. The results obtained can make a significant contribution to the development of light emitting diodes on silicon substrates.