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- 2025,Volume 18Issue 4
Artem I. Khrebtov
Affiliation
St. Petersburg State University
St. Petersburg, Russian Federation
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 26
- 5042
- Pages: 153-157
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 4547
- Pages: 255-260
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 3368
- Pages: 306-309
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 17
- 2686
- Pages: 143-147
Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 790
- Pages: 30-35
Growth of GaN nanowires with InN inserts by PA-MBE
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 690
- Pages: 139-142
MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 738
- Pages: 148-151
Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si (111) substrates
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 698
- Pages: 152-155

