Latest issues
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 34
- 5973
- Pages: 75-79
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 49
- 5645
- Pages: 114-120
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 4841
- Pages: 255-260
Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load
- Year: 2024
- Volume: 17
- Issue: 1.1
- 38
- 4272
- Pages: 137-142
Pressure and temperature sensing via ZnO-PDMS based membrane for wearable electronic applications
- Year: 2024
- Volume: 17
- Issue: 3.1
- 33
- 3550
- Pages: 63-67
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 3682
- Pages: 306-309
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 17
- 3002
- Pages: 143-147
Growth of GaN nanowires with InN inserts by PA-MBE
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 995
- Pages: 139-142
Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si (111) substrates
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 1005
- Pages: 152-155
Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers
- Year: 2025
- Volume: 18
- Issue: 3.1
- 10
- 1049
- Pages: 278-282
Effect of short-term heating on the morphology of AlF3 microstructures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 1007
- Pages: 283-286

