SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
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Author Vladimir V. Fedorov
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Vladimir V. Fedorov
Vladimir V. Fedorov
Affiliation
Alferov University
Publications
Orcid ID
0000-0001-5547-9387

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
Petruk A.D. Kharin N.Yu. Vinnichenko M.Ya. Norvatov I.A. Fedorov V.V. Firsov D.A.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 42
  • 4507
  • Pages: 14-19

Interband photoluminescence of InAs (P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
Ustimenko R.V. Vinnichenko M.Ya. Karaulov D.A. Firsov D.A. Fedorov V.V. Mozharov A.M. Kirilenko D.A. Mukhin I.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 34
  • 4708
  • Pages: 101-107

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
Anikina M.A. Kusnetsov A. Toksumakov A.N. Dremov V.V. Ghazaryan D.A. Fedorov V.V. Arsenin А.V. Volkov V.S. Bolshakov A.D.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 15
  • 4262
  • Pages: 130-136

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
Kharin N.Yu. Panevin V.Yu. Petruk A.D. Vinnichenko M.Ya. Norvatov I.A. Fedorov V.V.
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 216
  • 5091
  • Pages: 29-38

Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

Quantum wires, quantum dots, and other low-dimensional systems
Kozko I.A. Karaseva E.P. Sosnovitskaia Z.F. Istomina M.S. Fedorov V.V. Shmakov S.V. Kondratev V.M. Bolshakov A.D.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 60
  • 3564
  • Pages: 113-118

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
Sharov V.A. Alekseev P.A. Fedorov V.V. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 3346
  • Pages: 125-130

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
Kharin N.Yu. Panevin V.Yu. Vinnichenko M.Ya. Norvatov I.A. Fedorov V.V. Firsov D.A.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 3330
  • Pages: 143-148

Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Simulation of physical processes
Dvoretckaia L.N. Mozharov A.M. Goltaev A. S. Fedorov V.V. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 25
  • 4720
  • Pages: 38-46

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
Ruzhevich M.S. Mynbaev K.D. Bazhenov N.L. Kaveev A.K. Pavlov A.V. Fedorov V.V. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 15
  • 2948
  • Pages: 34-37

Numerical modal analysis of GaP optical microcavity

Simulation of physical processes
Funtikova A.S. Mozharov A.M. Fedorov V.V. Sharov V.A. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 29
  • 3061
  • Pages: 115-119

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
Fedorov V.V. Fedina S.V. Kaveev A.K. Kirilenko D.A. Faleev N.N. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 45
  • 4178
  • Pages: 120-133

Creation of optical isolated GaP (NAs) microcavities on silicon

Condensed matter physics
Dvoretckaia L.N. Mozharov A.M. Komarov S.D. Vyacheslavova E.A. Moiseev E.I. Fedorov V.V. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 33
  • 3654
  • Pages: 25-35

Formation of diluted nitride InAs1-хNх core-shell nanowires on silicon

Atom physics and physics of clusters and nanostructures
Kaveev A.K. Fedorov V.V. Miniv D.V.
  • Year: 2024
  • Volume: 17
  • Issue: 4
  • 21
  • 3662
  • Pages: 88-97

Structural and electrophysical properties of barium titanate epitaxial films

Structure growth, surface, and interfaces
Ladanova J.A. Zagorodneva V.N. Dvortsova P.A. Suturin S.M. Fedorov V.V. Ustinov A. B. Sakharov V.I. Sokolov N.S.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 19
  • 3894
  • Pages: 40-45

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
Kozko I.A. Karaseva E.P. Svinkin N.А. Rider М.А. Vyacheslavova E.A. Gridchin V.O. Fedorov V.V. Kondratev V.M. Bolshakov A.D.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 12
  • 3664
  • Pages: 77-82

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
Goltaev A. S. Fedina S.V. Fedorov V.V. Mozharov A.M. Novikova K.N. Maksimova A.A. Baranov A.I. Kaveev A.K. Pavlov A.V. Miniv D.V. Ustimenko R.V. Vinnichenko M.Ya. Mukhin I.S.
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 43
  • 4059
  • Pages: 9-21

Effect of short-term heating on the morphology of AlF3 microstructures

Physical materials technology
Dautov A.M. Fedorov V.V. Kotlyar K.P. Lendyashova V.V. Shugabaev T. Gridchin V.O. Shtrom I.V. Sibirev N.V.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 404
  • Pages: 283-286

Memristor effect in heterostructures based on gallium nitride nanowires on silicon

Condensed matter physics
Shugurov K.Yu. Mozharov A.M. Kaveev A.K. Fedorov V.V.
  • Year: 2025
  • Volume: 18
  • Issue: 4
  • 17
  • 521
  • Pages: 9-20

The resistive switching effect in the n-GaN/p-Si heterostructures

Condensed matter physics
Shugurov K.Yu. Mozharov A.M. Kaveev A.K. Fedorov V.V.
  • Year: 2026
  • Volume: 19
  • Issue: 1
  • 1
  • 24
  • Pages: 9-18