SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorVladimir V. Fedorov
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    Latest issues
    Vladimir V. Fedorov
    Vladimir V. Fedorov
    Affiliation
    Peter the Great St. Petersburg Polytechnic University
    Publications
    Orcid ID
    0000-0001-5547-9387

    Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

    Bulk properties of semiconductors
    Petruk A.D.Kharin N.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 42
    • 4905
    • Pages: 14-19

    Interband photoluminescence of InAs (P)/Si nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Ustimenko R.V.Vinnichenko M.Ya.Karaulov D.A.Firsov D.A.Fedorov V.V.Mozharov A.M.Kirilenko D.A.Mukhin I.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 35
    • 5135
    • Pages: 101-107

    Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

    Physical optics
    Anikina M.A.Kusnetsov A.Toksumakov A.N.Dremov V.V.Ghazaryan D.A.Fedorov V.V.Arsenin А.V.Volkov V.S.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 15
    • 4692
    • Pages: 130-136

    Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

    Condensed matter physics
    Kharin N.Yu.Panevin V.Yu.Petruk A.D.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.
    • Year: 2023
    • Volume: 16
    • Issue: 3
    • 216
    • 5510
    • Pages: 29-38

    Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

    Quantum wires, quantum dots, and other low-dimensional systems
    Kozko I.A.Karaseva E.P.Sosnovitskaia Z.F.Istomina M.S.Fedorov V.V.Shmakov S.V.Kondratev V.M.Bolshakov A.D.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 61
    • 3979
    • Pages: 113-118

    Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

    Quantum wires, quantum dots, and other low-dimensional systems
    Sharov V.A.Alekseev P.A.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 21
    • 3756
    • Pages: 125-130

    Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

    Optoelectronic and nanoelectronic devices
    Kharin N.Yu.Panevin V.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 21
    • 3739
    • Pages: 143-148

    Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

    Simulation of physical processes
    Dvoretckaia L.N. Mozharov A.M.Goltaev A. S.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 1
    • 26
    • 5151
    • Pages: 38-46

    Photoluminescence of self-induced InAs nanowires diluted with nitrogen

    Condensed matter physics
    Ruzhevich M.S.Mynbaev K.D.Bazhenov N.L.Kaveev A.K.Pavlov A.V.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 3386
    • Pages: 34-37

    Numerical modal analysis of GaP optical microcavity

    Simulation of physical processes
    Funtikova A.S.Mozharov A.M.Fedorov V.V.Sharov V.A.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 29
    • 3499
    • Pages: 115-119

    The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

    Physical materials technology
    Fedorov V.V.Fedina S.V.Kaveev A.K.Kirilenko D.A.Faleev N.N.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 2
    • 47
    • 4653
    • Pages: 120-133

    Creation of optical isolated GaP (NAs) microcavities on silicon

    Condensed matter physics
    Dvoretckaia L.N. Mozharov A.M.Komarov S.D.Vyacheslavova E.A.Moiseev E.I.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3
    • 33
    • 4124
    • Pages: 25-35

    Formation of diluted nitride InAs1-хNх core-shell nanowires on silicon

    Atom physics and physics of clusters and nanostructures
    Kaveev A.K.Fedorov V.V.Miniv D.V.
    • Year: 2024
    • Volume: 17
    • Issue: 4
    • 22
    • 4173
    • Pages: 88-97

    Structural and electrophysical properties of barium titanate epitaxial films

    Structure growth, surface, and interfaces
    Ladanova J.A.Zagorodneva V.N.Dvortsova P.A.Suturin S.M.Fedorov V.V.Ustinov A. B.Sakharov V.I.Sokolov N.S.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 22
    • 4330
    • Pages: 40-45

    Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Kozko I.A.Karaseva E.P.Svinkin N.А.Rider М.А.Vyacheslavova E.A.Gridchin V.O.Fedorov V.V.Kondratev V.M.Bolshakov A.D.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 14
    • 4058
    • Pages: 77-82

    Infrared photodetectors based on InAsP epitaxial nanowires on silicon

    Condensed matter physics
    Goltaev A. S.Fedina S.V.Fedorov V.V.Mozharov A.M.Novikova K.N.Maksimova A.A.Baranov A.I.Kaveev A.K.Pavlov A.V.Miniv D.V.Ustimenko R.V.Vinnichenko M.Ya.Mukhin I.S.
    • Year: 2025
    • Volume: 18
    • Issue: 2
    • 54
    • 4578
    • Pages: 9-21

    Effect of short-term heating on the morphology of AlF3 microstructures

    Physical materials technology
    Dautov A.M.Fedorov V.V.Kotlyar K.P.Lendyashova V.V.Shugabaev T.Gridchin V.O.Shtrom I.V.Sibirev N.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 5
    • 810
    • Pages: 283-286

    Memristor effect in heterostructures based on gallium nitride nanowires on silicon

    Condensed matter physics
    Shugurov K.Yu.Mozharov A.M.Kaveev A.K.Fedorov V.V.
    • Year: 2025
    • Volume: 18
    • Issue: 4
    • 22
    • 959
    • Pages: 9-20

    The resistive switching effect in the n-GaN/p-Si heterostructures

    Condensed matter physics
    Shugurov K.Yu.Mozharov A.M.Kaveev A.K.Fedorov V.V.
    • Year: 2026
    • Volume: 19
    • Issue: 1
    • 17
    • 523
    • Pages: 9-18

    Role of the buffer layer on the mechanical strength of nanowire-substrate interface

    Quantum wires, quantum dots, and other low-dimensional systems
    Lutsevich M.A.Sharov V.A.Kaveev A.K.Fedorov V.V.Mukhin I.S.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 1
    • 207
    • Pages: 75-80