Latest issues
- 2026,Volume 19Issue 3
- 2026,Volume 19Issue 2
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1 Full text
Publications
Orcid ID
0000-0001-7521-3754Temperature evolution of GaP nanowires photoelectronic properties
- Year: 2024
- Volume: 17
- Issue: 1.1
- 37
- 4499
- Pages: 119-124
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 50
- 5404
- Pages: 120-133
Luminescence enhancement in inelastic tunnelling of electrons by changing the geometry of the tunnelling contact
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 4002
- Pages: 236-240
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 56
- 5338
- Pages: 9-21

