SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorAndrey K. Kaveev
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    Latest issues
    Andrey K. Kaveev
    Andrey K. Kaveev
    Affiliation
    Ioffe Institute
    St. Petersburg, Russian Federation
    Publications
    Orcid ID
    0000-0002-3640-677X

    Formation of a dielectric sublayer heterostructure of lead-tin telluride

    Condensed matter physics
    Kaveev A.K.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 20
    • 5256
    • Pages: 158-161

    Photoluminescence of self-induced InAs nanowires diluted with nitrogen

    Condensed matter physics
    Ruzhevich M.S.Mynbaev K.D.Bazhenov N.L.Kaveev A.K.Pavlov A.V.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 3490
    • Pages: 34-37

    The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

    Physical materials technology
    Fedorov V.V.Fedina S.V.Kaveev A.K.Kirilenko D.A.Faleev N.N.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 2
    • 48
    • 4770
    • Pages: 120-133

    Formation of diluted nitride InAs1-хNх core-shell nanowires on silicon

    Atom physics and physics of clusters and nanostructures
    Kaveev A.K.Fedorov V.V.Miniv D.V.
    • Year: 2024
    • Volume: 17
    • Issue: 4
    • 23
    • 4291
    • Pages: 88-97

    Infrared photodetectors based on InAsP epitaxial nanowires on silicon

    Condensed matter physics
    Goltaev A. S.Fedina S.V.Fedorov V.V.Mozharov A.M.Novikova K.N.Maksimova A.A.Baranov A.I.Kaveev A.K.Pavlov A.V.Miniv D.V.Ustimenko R.V.Vinnichenko M.Ya.Mukhin I.S.
    • Year: 2025
    • Volume: 18
    • Issue: 2
    • 54
    • 4696
    • Pages: 9-21

    Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates

    Condensed matter physics
    Khrul S.N.Shubina K.Yu.Pirogov E.V.Kaveev A.K.Nikitina E.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 7
    • 874
    • Pages: 45-48

    Memristor effect in heterostructures based on gallium nitride nanowires on silicon

    Condensed matter physics
    Shugurov K.Yu.Mozharov A.M.Kaveev A.K.Fedorov V.V.
    • Year: 2025
    • Volume: 18
    • Issue: 4
    • 23
    • 1074
    • Pages: 9-20

    Role of the buffer layer on the mechanical strength of nanowire-substrate interface

    Quantum wires, quantum dots, and other low-dimensional systems
    Lutsevich M.A.Sharov V.A.Kaveev A.K.Fedorov V.V.Mukhin I.S.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 2
    • 310
    • Pages: 75-80

    The resistive switching effect in the n-GaN/p-Si heterostructures

    Condensed matter physics
    Shugurov K.Yu.Mozharov A.M.Kaveev A.K.Fedorov V.V.
    • Year: 2026
    • Volume: 19
    • Issue: 1
    • 17
    • 650
    • Pages: 9-18