SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
Version for the visually impaired
Author Andrey K. Kaveev
Submit Your Paper
Latest issues
Andrey K. Kaveev
Andrey K. Kaveev
Affiliation
Ioffe Institute
St. Petersburg, Russian Federation
Publications
Orcid ID
0000-0002-3640-677X

Formation of a dielectric sublayer heterostructure of lead-tin telluride

Condensed matter physics
Kaveev A.K.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 19
  • 4756
  • Pages: 158-161

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
Ruzhevich M.S. Mynbaev K.D. Bazhenov N.L. Kaveev A.K. Pavlov A.V. Fedorov V.V. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 15
  • 2948
  • Pages: 34-37

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
Fedorov V.V. Fedina S.V. Kaveev A.K. Kirilenko D.A. Faleev N.N. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 45
  • 4178
  • Pages: 120-133

Formation of diluted nitride InAs1-хNх core-shell nanowires on silicon

Atom physics and physics of clusters and nanostructures
Kaveev A.K. Fedorov V.V. Miniv D.V.
  • Year: 2024
  • Volume: 17
  • Issue: 4
  • 21
  • 3662
  • Pages: 88-97

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
Goltaev A. S. Fedina S.V. Fedorov V.V. Mozharov A.M. Novikova K.N. Maksimova A.A. Baranov A.I. Kaveev A.K. Pavlov A.V. Miniv D.V. Ustimenko R.V. Vinnichenko M.Ya. Mukhin I.S.
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 43
  • 4059
  • Pages: 9-21

Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates

Condensed matter physics
Khrul S.N. Shubina K.Yu. Pirogov E.V. Kaveev A.K. Nikitina E.V.
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 3
  • 385
  • Pages: 45-48

Memristor effect in heterostructures based on gallium nitride nanowires on silicon

Condensed matter physics
Shugurov K.Yu. Mozharov A.M. Kaveev A.K. Fedorov V.V.
  • Year: 2025
  • Volume: 18
  • Issue: 4
  • 17
  • 521
  • Pages: 9-20

The resistive switching effect in the n-GaN/p-Si heterostructures

Condensed matter physics
Shugurov K.Yu. Mozharov A.M. Kaveev A.K. Fedorov V.V.
  • Year: 2026
  • Volume: 19
  • Issue: 1
  • 1
  • 24
  • Pages: 9-18