SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorKseniia Yu. Shubina
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    Latest issues
    Kseniia Yu. Shubina
    Kseniia Yu. Shubina
    Affiliation
    Alferov University
    St. Petersburg, Russian Federation
    Publications
    Orcid ID
    0000-0003-1835-1629

    Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Uvarov A.V.Filatov V.V.Mizerov A.M.Timoshnev S.N.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 36
    • 5622
    • Pages: 157-162

    Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

    Condensed matter physics
    Nikitina E.V.Berezovskaya T.N.Pirogov E.V.Vasilkova E.I.Shubina K.Yu.Sinitskaya O.A.Sobolev M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 12
    • 4483
    • Pages: 133-137

    The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

    Physical electronics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Uvarov A.V.Mizerov A.M.Nikitina E.V.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 15
    • 4346
    • Pages: 439-443

    GaN based ultraviolet narrowband photodetectors

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Baranov A.I.Mizerov A.M.Nikitina E.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 22
    • 3193
    • Pages: 220-223

    Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

    Physical electronics
    Barantsev O.V.Vasilkova E.I.Pirogov E.V.Shubina K.Yu.Baranov A.I.Voropaev K.O.Vasil’ev A.A.Karachinsky L.Ya.Novikov I.I.Sobolev M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 25
    • 2895
    • Pages: 182-186

    Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates

    Physical materials technology
    Nikitina E.V.Shubina K.Yu.Sobolev M.S.Pirogov E.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 16
    • 2955
    • Pages: 275-278

    Near-UV detectors based on ultrathin GaN epitaxial layers

    Optoelectronic and nanoelectronic devices
    Shubina K.Yu.Sinitskaya O.A.Enns Ya.B.Mizerov A.M.Nikitina E.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 16
    • 4025
    • Pages: 100-104

    Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates

    Condensed matter physics
    Khrul S.N.Shubina K.Yu.Pirogov E.V.Kaveev A.K.Nikitina E.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 6
    • 677
    • Pages: 45-48

    High-sensitivity and low-noise GaN-based ultraviolet photodetectors

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mizerov A.M.Nikitina E.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 3
    • 610
    • Pages: 196-199