Latest issues
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 32
- 6338
- Pages: 145-149
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 37
- 6340
- Pages: 157-162
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 5125
- Pages: 133-137
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 5012
- Pages: 439-443
Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 3660
- Pages: 275-278
Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content
- Year: 2025
- Volume: 18
- Issue: 1.1
- 27
- 4759
- Pages: 46-51
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 17
- 4720
- Pages: 100-104
Optical properties of disk microresonators based on wide-bandgap III-N materials
- Year: 2025
- Volume: 18
- Issue: 3.1
- 9
- 1364
- Pages: 209-213
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 12
- 1490
- Pages: 247-251
Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 9
- 1343
- Pages: 45-48
High-sensitivity and low-noise GaN-based ultraviolet photodetectors
- Year: 2025
- Volume: 18
- Issue: 3.2
- 5
- 1199
- Pages: 196-199

