Latest issues
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1
- 2025,Volume 18Issue 4.1 Full text
- 2025,Volume 18Issue 4
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 30
- 5692
- Pages: 145-149
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 36
- 5622
- Pages: 157-162
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 4483
- Pages: 133-137
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 4346
- Pages: 439-443
Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 2955
- Pages: 275-278
Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content
- Year: 2025
- Volume: 18
- Issue: 1.1
- 24
- 4057
- Pages: 46-51
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 16
- 4025
- Pages: 100-104
Optical properties of disk microresonators based on wide-bandgap III-N materials
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 711
- Pages: 209-213
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 726
- Pages: 247-251
Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 6
- 677
- Pages: 45-48
High-sensitivity and low-noise GaN-based ultraviolet photodetectors
- Year: 2025
- Volume: 18
- Issue: 3.2
- 3
- 610
- Pages: 196-199

