Ekaterina  V. Nikitina
Ekaterina V. Nikitina

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 30
  • 5442
  • Pages: 145-149

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 36
  • 5349
  • Pages: 157-162

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 4206
  • Pages: 133-137

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 4053
  • Pages: 439-443

GaN based ultraviolet narrowband photodetectors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 16
  • 2898
  • Pages: 220-223

Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 13
  • 2672
  • Pages: 275-278

Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

Heterostructures, superlattices, quantum wells
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 24
  • 3776
  • Pages: 46-51

Near-UV detectors based on ultrathin GaN epitaxial layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 11
  • 3729
  • Pages: 100-104

Optical properties of disk microresonators based on wide-bandgap III-N materials

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 6
  • 441
  • Pages: 209-213

Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures

Physical materials technology
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 457
  • Pages: 247-251

Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 3
  • 415
  • Pages: 45-48

High-sensitivity and low-noise GaN-based ultraviolet photodetectors

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 2
  • 370
  • Pages: 196-199