Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
Authors:
Nikitina Ekaterina V. Shubina Kseniia Yu. Sobolev Maxim S. Pirogov Evgeny V.
Abstract:

In this work bulk layers of GaPN(As) solid solutions grown by plasma assisted molecular beam epitaxy on gallium phosphide and silicon substrates are studied. The morphology, structural and optical properties of diluted nitride  epilayers synthesized on GaP and Si are compared. The possibility of obtaining GaPN(As) epitaxial layers of optical quality on lattice-mismatched silicon substrates is demonstrated.