SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
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Author Alexander S. Gudovskikh
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Alexander S. Gudovskikh
Alexander S. Gudovskikh
Affiliation
Alferov University
Publications
Orcid ID
0000-0002-7632-3194

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
Kondratev V.M. Vyacheslavova E.A. Morozov Ivan A. Nalimova S.S. Moshnikov V.A. Gudovskikh A.S. Bolshakov A.D.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 57
  • 5632
  • Pages: 10-15

Study of recombination and transport properties of a-Si:H (i)/ μc-Si:H (n) contact system for crystalline silicon solar cells

Physical electronics
Uvarov A.V. Baranov A.I. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 17
  • 5452
  • Pages: 150-154

Optimization of the contact grid for the GaP/Si solar cells

Simulation of physical processes
Bogdanova M.V. Uvarov A.V. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 5523
  • Pages: 93-96

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
Maksimova A.A. Uvarov A.V. Kirilenko D.A. Baranov A.I. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 42
  • 6157
  • Pages: 123-127

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
Kondratev V.M. Vyacheslavova E.A. Morozov Ivan A. Nalimova S.S. Moshnikov V.A. Gudovskikh A.S. Bolshakov A.D.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 30
  • 5007
  • Pages: 43-48

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
Kiianitsyn S.Yu. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 19
  • 4431
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 11
  • 4704
  • Pages: 176-181

Flexible solar cells based on PEDOT: PSS and vertically aligned silicon structures

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Neplokh V.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 49
  • 5209
  • Pages: 10-17

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 4327
  • Pages: 434-438

Study of the effect of solvents and surfactants on electrical properties of PEDOT: PSS films

Physical electronics
Pozdeev V.A. Uvarov A.V. Gudovskikh A.S. Maksimova A.A. Vyacheslavova E.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 30
  • 5063
  • Pages: 468-472

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
Maksimova A.A. Uvarov A.V. Pozdeev V.A. Kirilenko D.A. Baranov A.I. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 35
  • 4567
  • Pages: 273-277

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
Mikhaylov O.P. Baranov A.I. Gudovskikh A.S. Terukov E.I.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 26
  • 3741
  • Pages: 160-164

Effect of light incidence angle on the characteristics of silicon solar cells with different texturing

Atom physics and physics of clusters and nanostructures
Yarchuk E.Y Vyacheslavova E.A. Monastyrenko A.O. Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 8
  • 2733
  • Pages: 134-137

Gallium phosphide/black silicon heterojunction solar cells

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 20
  • 2798
  • Pages: 199-203

Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

Physics of molecules, clusters and nanostructures
Maksimova A.A. Uvarov A.V. Vyacheslavova E.A. Baranov A.I. Yarchuk E.Y Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 15
  • 2436
  • Pages: 152-156

Degradation of solar heterostructured cells under the influence of electron flow

Physical optics
Mikhaylov O.P. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S. Shvarts M.Z. Terukov E.I.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 11
  • 2475
  • Pages: 251-255

Effect of surfactants on surface tension of PEDOT: PSS aqueous solution

Physical materials technology
Pozdeev V.A. Uvarov A.V. Gudovskikh A.S. Monastyrenko A.O.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 17
  • 2868
  • Pages: 279-282

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
Baranov A.I. Vtorygin G.E. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 26
  • 3430
  • Pages: 17-24

Black silicon formation using cryogenic etching and photoresist layer

Physical electronics
Vyacheslavova E.A. Mokhov D.V. Uvarov A.V. Maksimova A.A. Mikhaylov O.P. Baranov A.I. Gudovskikh A.S.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 4
  • 464
  • Pages: 182-186

Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures

Physical materials technology
Uvarov A.V. Baranov A.I. Maksimova A.A. Vyacheslavova E.A. Pozdeev V.A. Mikhaylov O.P. Nikitina E.V. Gudovskikh A.S.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 461
  • Pages: 247-251

Capacitance characterization of GaN/InP multilayer structures

Physical materials technology
Mikhaylov O.P. Baranov A.I. Pozdeev V.A. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 437
  • Pages: 258-262