SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorAlexander S. Gudovskikh
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    Latest issues
    Alexander S. Gudovskikh
    Alexander S. Gudovskikh
    Affiliation
    Alferov University
    Publications
    Orcid ID
    0000-0002-7632-3194

    Study of quasi 1-D silicon nanostructures adsorption properties

    Condensed matter physics
    Kondratev V.M.Vyacheslavova E.A.Morozov Ivan A.Nalimova S.S. Moshnikov V.A.Gudovskikh A.S.Bolshakov A.D.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 57
    • 6425
    • Pages: 10-15

    Study of recombination and transport properties of a-Si:H (i)/ μc-Si:H (n) contact system for crystalline silicon solar cells

    Physical electronics
    Uvarov A.V.Baranov A.I.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 18
    • 6166
    • Pages: 150-154

    Optimization of the contact grid for the GaP/Si solar cells

    Simulation of physical processes
    Bogdanova M.V.Uvarov A.V.Gudovskikh A.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 12
    • 6234
    • Pages: 93-96

    Plasma deposited indium phosphide and its electrophysical properties

    Physical electronics
    Maksimova A.A.Uvarov A.V.Kirilenko D.A.Baranov A.I.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 45
    • 7127
    • Pages: 123-127

    Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

    Condensed matter physics
    Kondratev V.M.Vyacheslavova E.A.Morozov Ivan A.Nalimova S.S. Moshnikov V.A.Gudovskikh A.S.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 31
    • 5767
    • Pages: 43-48

    Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

    Heterostructures, superlattices, quantum wells
    Kiianitsyn S.Yu.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 20
    • 5192
    • Pages: 90-95

    Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

    Optoelectronic and nanoelectronic devices
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 14
    • 5511
    • Pages: 176-181

    Flexible solar cells based on PEDOT: PSS and vertically aligned silicon structures

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Neplokh V.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 52
    • 6116
    • Pages: 10-17

    Heterojunction solar cells based on nanostructured black silicon

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 19
    • 5117
    • Pages: 434-438

    Study of the effect of solvents and surfactants on electrical properties of PEDOT: PSS films

    Physical electronics
    Pozdeev V.A.Uvarov A.V.Gudovskikh A.S.Maksimova A.A.Vyacheslavova E.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 32
    • 5930
    • Pages: 468-472

    Boron phosphide grown by PECVD and its optical properties

    Physical materials technology
    Maksimova A.A.Uvarov A.V.Pozdeev V.A.Kirilenko D.A.Baranov A.I.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 37
    • 5540
    • Pages: 273-277

    Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

    Optoelectronic and nanoelectronic devices
    Mikhaylov O.P.Baranov A.I.Gudovskikh A.S.Terukov E.I.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 33
    • 4639
    • Pages: 160-164

    Effect of light incidence angle on the characteristics of silicon solar cells with different texturing

    Atom physics and physics of clusters and nanostructures
    Yarchuk E.YVyacheslavova E.A.Monastyrenko A.O.Gudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 3511
    • Pages: 134-137

    Gallium phosphide/black silicon heterojunction solar cells

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 26
    • 3612
    • Pages: 199-203

    Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

    Physics of molecules, clusters and nanostructures
    Maksimova A.A.Uvarov A.V.Vyacheslavova E.A.Baranov A.I.Yarchuk E.YGudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 20
    • 3214
    • Pages: 152-156

    Degradation of solar heterostructured cells under the influence of electron flow

    Physical optics
    Mikhaylov O.P.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.Shvarts M.Z.Terukov E.I.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 15
    • 3241
    • Pages: 251-255

    Effect of surfactants on surface tension of PEDOT: PSS aqueous solution

    Physical materials technology
    Pozdeev V.A.Uvarov A.V.Gudovskikh A.S.Monastyrenko A.O.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 19
    • 3765
    • Pages: 279-282

    Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

    Condensed matter physics
    Baranov A.I.Vtorygin G.E.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3
    • 27
    • 4322
    • Pages: 17-24

    Black silicon formation using cryogenic etching and photoresist layer

    Physical electronics
    Vyacheslavova E.A.Mokhov D.V.Uvarov A.V.Maksimova A.A.Mikhaylov O.P.Baranov A.I.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 8
    • 1318
    • Pages: 182-186

    Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures

    Physical materials technology
    Uvarov A.V.Baranov A.I.Maksimova A.A.Vyacheslavova E.A.Pozdeev V.A.Mikhaylov O.P.Nikitina E.V.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 8
    • 1318
    • Pages: 247-251

    Capacitance characterization of GaN/InP multilayer structures

    Physical materials technology
    Mikhaylov O.P.Baranov A.I.Pozdeev V.A.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 10
    • 1193
    • Pages: 258-262