Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics

This article is devoted to the study of the contact and recombination properties of the combination of a-Si:H(i)/μc-Si:H(n) layers. Numerical modeling of the band diagram as well as experimental study of the contact system with a silicon substrate has been carried out. The optimal values of the thicknesses of the contact layers are determined, which make it possible to obtain a low rate of carrier recombination and contact resistance.