SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorEkaterina A. Vyacheslavova
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    Latest issues
    Ekaterina A. Vyacheslavova
    Ekaterina A. Vyacheslavova
    Affiliation
    Alferov University
    Publications
    Orcid ID
    0000-0001-6869-1213

    Study of quasi 1-D silicon nanostructures adsorption properties

    Condensed matter physics
    Kondratev V.M.Vyacheslavova E.A.Morozov Ivan A.Nalimova S.S. Moshnikov V.A.Gudovskikh A.S.Bolshakov A.D.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 57
    • 5885
    • Pages: 10-15

    Study of recombination and transport properties of a-Si:H (i)/ μc-Si:H (n) contact system for crystalline silicon solar cells

    Physical electronics
    Uvarov A.V.Baranov A.I.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 17
    • 5673
    • Pages: 150-154

    Plasma deposited indium phosphide and its electrophysical properties

    Physical electronics
    Maksimova A.A.Uvarov A.V.Kirilenko D.A.Baranov A.I.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 42
    • 6455
    • Pages: 123-127

    Modification of the optical and electrical properties of NiO films by thermal annealing

    Physical materials technology
    Enns Ya.B.Kazakin A.N.Komarevtcev I.M.Vyacheslavova E.A.Kondrateva A.S.Mishin M.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 18
    • 5694
    • Pages: 285-289

    Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

    Condensed matter physics
    Kondratev V.M.Vyacheslavova E.A.Morozov Ivan A.Nalimova S.S. Moshnikov V.A.Gudovskikh A.S.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 31
    • 5248
    • Pages: 43-48

    Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

    Heterostructures, superlattices, quantum wells
    Kiianitsyn S.Yu.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 19
    • 4664
    • Pages: 90-95

    Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

    Optoelectronic and nanoelectronic devices
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 11
    • 4959
    • Pages: 176-181

    Flexible solar cells based on PEDOT: PSS and vertically aligned silicon structures

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Neplokh V.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 50
    • 5504
    • Pages: 10-17

    Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy

    Condensed matter physics
    Kondratev V.M.Kozko I.A.Karaseva E.P.Vyacheslavova E.A.Shugabaev T.Svinkin N.А.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 12
    • 4464
    • Pages: 151-156

    Heterojunction solar cells based on nanostructured black silicon

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 18
    • 4571
    • Pages: 434-438

    Study of the effect of solvents and surfactants on electrical properties of PEDOT: PSS films

    Physical electronics
    Pozdeev V.A.Uvarov A.V.Gudovskikh A.S.Maksimova A.A.Vyacheslavova E.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 31
    • 5360
    • Pages: 468-472

    Capacitance-voltage characterization of BP layers grown by PECVD mode

    Physical electronics
    Vtorygin G.E.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 22
    • 4429
    • Pages: 473-478

    Boron phosphide grown by PECVD and its optical properties

    Physical materials technology
    Maksimova A.A.Uvarov A.V.Pozdeev V.A.Kirilenko D.A.Baranov A.I.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 36
    • 4859
    • Pages: 273-277

    Effect of light incidence angle on the characteristics of silicon solar cells with different texturing

    Atom physics and physics of clusters and nanostructures
    Yarchuk E.YVyacheslavova E.A.Monastyrenko A.O.Gudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 11
    • 3005
    • Pages: 134-137

    Gallium phosphide/black silicon heterojunction solar cells

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 22
    • 3063
    • Pages: 199-203

    Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

    Physics of molecules, clusters and nanostructures
    Maksimova A.A.Uvarov A.V.Vyacheslavova E.A.Baranov A.I.Yarchuk E.YGudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 15
    • 2676
    • Pages: 152-156

    Degradation of solar heterostructured cells under the influence of electron flow

    Physical optics
    Mikhaylov O.P.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.Shvarts M.Z.Terukov E.I.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 11
    • 2718
    • Pages: 251-255

    Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

    Condensed matter physics
    Baranov A.I.Vtorygin G.E.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3
    • 26
    • 3704
    • Pages: 17-24

    Creation of optical isolated GaP (NAs) microcavities on silicon

    Condensed matter physics
    Dvoretckaia L.N. Mozharov A.M.Komarov S.D.Vyacheslavova E.A.Moiseev E.I.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3
    • 33
    • 3983
    • Pages: 25-35

    Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Kozko I.A.Karaseva E.P.Svinkin N.А.Rider М.А.Vyacheslavova E.A.Gridchin V.O.Fedorov V.V.Kondratev V.M.Bolshakov A.D.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 14
    • 3942
    • Pages: 77-82

    Modification of silicon nanowires with silver nanoparticles for gas sensor applications

    Condensed matter physics
    Kondratev V.M.Vyacheslavova E.A.Shugabaev T.Bolshakov A.D.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 4
    • 672
    • Pages: 81-84

    Black silicon formation using cryogenic etching and photoresist layer

    Physical electronics
    Vyacheslavova E.A.Mokhov D.V.Uvarov A.V.Maksimova A.A.Mikhaylov O.P.Baranov A.I.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 4
    • 731
    • Pages: 182-186

    Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures

    Physical materials technology
    Uvarov A.V.Baranov A.I.Maksimova A.A.Vyacheslavova E.A.Pozdeev V.A.Mikhaylov O.P.Nikitina E.V.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 3
    • 706
    • Pages: 247-251

    Capacitance characterization of GaN/InP multilayer structures

    Physical materials technology
    Mikhaylov O.P.Baranov A.I.Pozdeev V.A.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 8
    • 678
    • Pages: 258-262