Moshnikov Vyacheslav A.
  • Publications

Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

Condensed matter physics
  • Year: 2010
  • Issue: 1
  • 1
  • 5424
  • Pages: 18-28

Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 600
  • 6004
  • Pages: 31-42

Colloidal CdSe and ZnSe/Mn quantum dots: their cytotoxicity and effect on cell morphology

Biophysics and medical physics
  • Year: 2015
  • Issue: 3
  • 2458
  • 8996
  • Pages: 86-95

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 42
  • 1738
  • Pages: 10-15

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 20
  • 1091
  • Pages: 43-48

Compositions based on porous silicon and nickel oxide obtained by cooperative synthesis

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 14
  • 1250
  • Pages: 393-397

Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 9
  • 487
  • Pages: 9-19