SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
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Year: 2024 Volume: 17 Issue: 1.1
Pages: 179
809 55264
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Spin-dependent photon echo for an ensemble of three-level systems

Bulk properties of semiconductors
Zhilyakov V.L. Yugova I.A.
  • 40
  • 1983
  • Pages: 6-11

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
Melentyev G.A. Karaulov D.A. Kostromin N.A. Vinnichenko M.Ya. Firsov D.A. Shalygin V.A.
  • 49
  • 2136
  • Pages: 12-19

Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
Zdoroveyshchev D.A. Vikhrova O.V. Danilov Yu.A. Dudin Yu.A. Zdoroveyshchev A.V. Parafin A.E. Drozdov M.N.
  • 14
  • 2032
  • Pages: 20-24

Destruction of the conducting state by ac electric field in naphthalocyanine complexes

Bulk properties of semiconductors
Pshenichnyi V.A. Dubinina T.V. Drozdov K.A.
  • 17
  • 1844
  • Pages: 25-30

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
Berdnikov V.S. Kuznetsova M.S. Kavokin K.V. Dzhioev R.I.
  • 22
  • 2039
  • Pages: 31-36

Investigation of nanosized structures using internal friction effect

Structure growth, surface, and interfaces
Kozodaev D.A. Novikov I.A. Moshnikov V.A.
  • 16
  • 2026
  • Pages: 37-42

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Structure growth, surface, and interfaces
Osinnykh I.V. Malin T.V. Milakhin D.S. Zhuravlev K.V.
  • 24
  • 2137
  • Pages: 43-48

Electron irradiation as a method for controlling luminescence of hexagonal boron nitride

Structure growth, surface, and interfaces
Gogina O.A. Petrov Yu.V. Vyvenko O.F. Kovalchuk S. Bolotin K.
  • 31
  • 2058
  • Pages: 49-54

Effects of resonant tunneling in GaAs/AlAs heterostructure

Heterostructures, superlattices, quantum wells
Domoratsky E.V. Zakharchenko M.V. Glinsky G. F.
  • 36
  • 1866
  • Pages: 55-61

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
Chumanov I.V. Firsov D.D. Kolyada D.V. Komkov O.S. Skvortsov I.V. Mashanov V.I. Timofeev V.A.
  • 34
  • 1840
  • Pages: 62-67

Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping

Heterostructures, superlattices, quantum wells
Adamov R.B. Melentyev G.A. Podoskin A.A. Slipchenko S.O. Sedova I.V. Sorokin S.V. Makhov I.S. Firsov D.A. Shalygin V.A.
  • 25
  • 2247
  • Pages: 68-76

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
Ruzhevich M.S. Mynbaev K.D. Bazhenov N.L. Romanov V.V. Moiseev K.D.
  • 27
  • 1836
  • Pages: 77-82

Polarized reflectance spectroscopy of aluminum nanoantennas on the surface of emitting GeSiSn/Si heterostructures

Heterostructures, superlattices, quantum wells
Khakhulin S.А. Firsov D.D. Komkov O.S. Timofeev V.A. Skvortsov I.V. Mashanov V.I. Utkin D.E.
  • 32
  • 1989
  • Pages: 83-88

Gurzhi effect in point contacts in GaAs

Heterostructures, superlattices, quantum wells
Sarypov D.I. Pokhabov D.A. Pogosov A.G. Egorov D.A. Zhdanov E.Yu. Bakarov A.K.
  • 32
  • 2075
  • Pages: 89-94

Excitation of plasmon modes localized at the edge of a graphene rectangle by teraherz wave

Quantum wires, quantum dots, and other low-dimensional systems
Mashinsky K.V. Popov V.V. Fateev D.V.
  • 12
  • 1916
  • Pages: 95-99

Single photon emission of “silicon-vacancy” centers in nanodiamonds placed in cylindrical pits on a gold film

Quantum wires, quantum dots, and other low-dimensional systems
Zhivopistsev А.А. Romshin A.M. Gritsienko A.V. Lega P.V. Bagramov R.Kh. Filonenko V.P. Vitukhnovsky A.G. Vlasov I.I.
  • 42
  • 2054
  • Pages: 100-104

Photoinduced light absorption in Ge/Si quantum dots

Quantum wires, quantum dots, and other low-dimensional systems
Ustimenko R.V. Karaulov D.A. Vinnichenko M.Ya. Makhov I.S. Firsov D.A. Sarkisyan H.A. Sargsian T.A. Hayrapetyan D.B.
  • 38
  • 2264
  • Pages: 105-112

Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

Quantum wires, quantum dots, and other low-dimensional systems
Kozko I.A. Karaseva E.P. Sosnovitskaia Z.F. Istomina M.S. Fedorov V.V. Shmakov S.V. Kondratev V.M. Bolshakov A.D.
  • 49
  • 1945
  • Pages: 113-118

Temperature evolution of GaP nanowires photoelectronic properties

Quantum wires, quantum dots, and other low-dimensional systems
Karaseva E.P. Kozko I.A. Rider М.А. Kovova M.S. Zakharov V.V. Fedina S.V. Kondratev V.M. Bolshakov A.D.
  • 30
  • 1867
  • Pages: 119-124

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
Sharov V.A. Alekseev P.A. Fedorov V.V. Mukhin I.S.
  • 17
  • 1781
  • Pages: 125-130

Quality factor enhancement of spherical resonators by radial anisotropy

Quantum wires, quantum dots, and other low-dimensional systems
Eghbali A. Vyshnevyy A.A.
  • 13
  • 1861
  • Pages: 131-136

Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load

Optoelectronic and nanoelectronic devices
Nikolaeva A.V. Kondratev V.M. Kadinskaya S.A. Markina D.E. Lendyashova V.V. Dvoretckaia L.N. Monastyrenko A.O. Kochetkov F.M. Bolshakov A.D.
  • 31
  • 1891
  • Pages: 137-142

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
Kharin N.Yu. Panevin V.Yu. Vinnichenko M.Ya. Norvatov I.A. Fedorov V.V. Firsov D.A.
  • 19
  • 1787
  • Pages: 143-148

Photocurrent in MIS structures based on germanosilicate films

Optoelectronic and nanoelectronic devices
Hamoud G. Kamaev G.N. Vergnat M. Volodin V.A.
  • 21
  • 2212
  • Pages: 149-154

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
Soldatenkov F.Yu. Ivanov A.E. Malevskiy D.A. Levin S.V.
  • 11
  • 1804
  • Pages: 155-159

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
Mikhaylov O.P. Baranov A.I. Gudovskikh A.S. Terukov E.I.
  • 21
  • 1991
  • Pages: 160-164

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
Kalinovskii V.S. Maleev N.A. Vasil’ev A.P. Kontrosh E.V. Tolkachev I.A. Prudchenko K.К. Ustinov V.M.
  • 19
  • 1954
  • Pages: 165-170

Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix

Novel materials
Matyunina K.S. Nikolskaya A.A. Kriukov R.N. Yunin P.A. Korolev D.S.
  • 15
  • 1829
  • Pages: 171-177