SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
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    Year: 2024
    Volume: 17
    Issue: 1.1
    Pages: 179
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    110934
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    Spin-dependent photon echo for an ensemble of three-level systems

    Bulk properties of semiconductors
    Zhilyakov V.L.Yugova I.A.
    • 46
    • 3930
    • Pages: 6-11

    Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

    Bulk properties of semiconductors
    Melentyev G.A.Karaulov D.A.Kostromin N.A.Vinnichenko M.Ya.Firsov D.A.Shalygin V.A.
    • 67
    • 4387
    • Pages: 12-19

    Features of isovalent doping of gallium arsenide with bismuth ions

    Bulk properties of semiconductors
    Zdoroveyshchev D.A.Vikhrova O.V.Danilov Yu.A.Dudin Yu.A.Zdoroveyshchev A.V.Parafin A.E.Drozdov M.N.
    • 21
    • 4296
    • Pages: 20-24

    Destruction of the conducting state by ac electric field in naphthalocyanine complexes

    Bulk properties of semiconductors
    Pshenichnyi V.A.Dubinina T.V.Drozdov K.A.
    • 22
    • 3792
    • Pages: 25-30

    Dynamics of electron-nuclear spin system in GaAs: Mn epitaxial layers

    Bulk properties of semiconductors
    Berdnikov V.S.Kuznetsova M.S.Kavokin K.V.Dzhioev R.I.
    • 36
    • 3980
    • Pages: 31-36

    Investigation of nanosized structures using internal friction effect

    Structure growth, surface, and interfaces
    Kozodaev D.A.Novikov I.A.Moshnikov V.A.
    • 21
    • 3909
    • Pages: 37-42

    Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

    Structure growth, surface, and interfaces
    Osinnykh I.V.Malin T.V.Milakhin D.S.Zhuravlev K.V.
    • 28
    • 4365
    • Pages: 43-48

    Electron irradiation as a method for controlling luminescence of hexagonal boron nitride

    Structure growth, surface, and interfaces
    Gogina O.A.Petrov Yu.V.Vyvenko O.F.Kovalchuk S.Bolotin K.
    • 38
    • 4123
    • Pages: 49-54

    Effects of resonant tunneling in GaAs/AlAs heterostructure

    Heterostructures, superlattices, quantum wells
    Domoratsky E.V.Zakharchenko M.V.Glinsky G. F.
    • 57
    • 3948
    • Pages: 55-61

    Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

    Heterostructures, superlattices, quantum wells
    Chumanov I.V.Firsov D.D.Kolyada D.V.Komkov O.S.Skvortsov I.V.Mashanov V.I.Timofeev V.A.
    • 50
    • 3704
    • Pages: 62-67

    Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping

    Heterostructures, superlattices, quantum wells
    Adamov R.B.Melentyev G.A.Podoskin A.A.Slipchenko S.O.Sedova I.V.Sorokin S.V.Makhov I.S.Firsov D.A.Shalygin V.A.
    • 27
    • 4235
    • Pages: 68-76

    Electroluminescence of narrow-gap InAs/InAs1-ySby/InAsSbP heterostructures with y = 0.07−0.12

    Heterostructures, superlattices, quantum wells
    Ruzhevich M.S.Mynbaev K.D.Bazhenov N.L.Romanov V.V.Moiseev K.D.
    • 27
    • 3680
    • Pages: 77-82

    Polarized reflectance spectroscopy of aluminum nanoantennas on the surface of emitting GeSiSn/Si heterostructures

    Heterostructures, superlattices, quantum wells
    Khakhulin S.А.Firsov D.D.Komkov O.S.Timofeev V.A.Skvortsov I.V.Mashanov V.I.Utkin D.E.
    • 40
    • 3838
    • Pages: 83-88

    Gurzhi effect in point contacts in GaAs

    Heterostructures, superlattices, quantum wells
    Sarypov D.I.Pokhabov D.A.Pogosov A.G.Egorov D.A.Zhdanov E.Yu.Bakarov A.K.
    • 40
    • 4089
    • Pages: 89-94

    Excitation of plasmon modes localized at the edge of a graphene rectangle by teraherz wave

    Quantum wires, quantum dots, and other low-dimensional systems
    Mashinsky K.V.Popov V.V.Fateev D.V.
    • 18
    • 3983
    • Pages: 95-99

    Single photon emission of «silicon-vacancy» centers in nanodiamonds placed in cylindrical pits on a gold film

    Quantum wires, quantum dots, and other low-dimensional systems
    Zhivopistsev А.А.Romshin A.M.Gritsienko A.V.Lega P.V.Bagramov R.Kh.Filonenko V.P.Vitukhnovsky A.G.Vlasov I.I.
    • 52
    • 4209
    • Pages: 100-104

    Photoinduced light absorption in Ge/Si quantum dots

    Quantum wires, quantum dots, and other low-dimensional systems
    Ustimenko R.V.Karaulov D.A.Vinnichenko M.Ya.Makhov I.S.Firsov D.A.Sarkisyan H.A.Sargsian T.A.Hayrapetyan D.B.
    • 43
    • 4296
    • Pages: 105-112

    Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

    Quantum wires, quantum dots, and other low-dimensional systems
    Kozko I.A.Karaseva E.P.Sosnovitskaia Z.F.Istomina M.S.Fedorov V.V.Shmakov S.V.Kondratev V.M.Bolshakov A.D.
    • 61
    • 3874
    • Pages: 113-118

    Temperature evolution of GaP nanowires photoelectronic properties

    Quantum wires, quantum dots, and other low-dimensional systems
    Karaseva E.P.Kozko I.A.Rider М.А.Kovova M.S.Zakharov V.V.Fedina S.V.Kondratev V.M.Bolshakov A.D.
    • 34
    • 3706
    • Pages: 119-124

    Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

    Quantum wires, quantum dots, and other low-dimensional systems
    Sharov V.A.Alekseev P.A.Fedorov V.V.Mukhin I.S.
    • 21
    • 3663
    • Pages: 125-130

    Quality factor enhancement of spherical resonators by radial anisotropy

    Quantum wires, quantum dots, and other low-dimensional systems
    Eghbali A.Vyshnevyy A.A.
    • 15
    • 3808
    • Pages: 131-136

    Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load

    Optoelectronic and nanoelectronic devices
    Nikolaeva A.V.Kondratev V.M.Kadinskaya S.A.Markina D.E.Lendyashova V.V.Dvoretckaia L.N. Monastyrenko A.O.Kochetkov F.M.Bolshakov A.D.
    • 37
    • 3922
    • Pages: 137-142

    Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

    Optoelectronic and nanoelectronic devices
    Kharin N.Yu.Panevin V.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • 21
    • 3628
    • Pages: 143-148

    Photocurrent in MIS structures based on germanosilicate films

    Optoelectronic and nanoelectronic devices
    Hamoud G.Kamaev G.N.Vergnat M.Volodin V.A.
    • 32
    • 4148
    • Pages: 149-154

    High-temperature high-voltage p-i-n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • 14
    • 3627
    • Pages: 155-159

    Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

    Optoelectronic and nanoelectronic devices
    Mikhaylov O.P.Baranov A.I.Gudovskikh A.S.Terukov E.I.
    • 27
    • 4029
    • Pages: 160-164

    Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

    Optoelectronic and nanoelectronic devices
    Kalinovskii V.S.Maleev N.A.Vasil’ev A.P.Kontrosh E.V.Tolkachev I.A.Prudchenko K.К.Ustinov V.M.
    • 26
    • 4022
    • Pages: 165-170

    Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix

    Novel materials
    Matyunina K.S.Nikolskaya A.A.Kriukov R.N.Yunin P.A.Korolev D.S.
    • 21
    • 3743
    • Pages: 171-177