Latest issues
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1
- 2025,Volume 18Issue 4.1 Full text
- 2025,Volume 18Issue 4
Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction
- Year: 2011
- Issue: 2
- 0
- 9274
- Pages: 25-30
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 86
- 6209
- Pages: 32-43
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 67
- 4388
- Pages: 12-19
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 4235
- Pages: 68-76
Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface
- Year: 2025
- Volume: 18
- Issue: 1.1
- 20
- 4139
- Pages: 58-66
Electric field-induced anisotropy of absorption and refraction of terahertz radiation in n-InSb
- Year: 2026
- Volume: 19
- Issue: 1.1
- 1
- 71
- Pages: 12-20

