Firsov Dmitry A.
  • Position
    Professor
  • Affiliation
    Peter the Great St. Petersburg Polytechnic University
  • Degree
    Doctor of Physics and Mathematics
  • Russia, 195251, St.Petersburg, Polytechnicheskaya, 29
  • 2 уч. корпус
    ауд. 210
  • Biography
  • Publications

Research interests: semiconductors, nanostructures, photonics.

Carrier lifetime in InAs / GaSb superlattice structures

Condensed matter physics
  • Year: 2013
  • Issue: 2
  • 641
  • 6821
  • Pages: 15-21

The topical trends in semiconductor and nanostructure physics, semiconductor  opto- and nanoelectronics (on the 18th All-Russion Youth Conference)

Conferences
  • Year: 2017
  • Volume: 10
  • Issue: 2
  • 68
  • 5770
  • Pages: 123-132

Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 5666
  • Pages: 9-15

Optical absorption in Ge/Si quantum dots at different population densities of the dots states

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 5916
  • Pages: 9-15

Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 426
  • 6298
  • Pages: 109-114

Investigation of photoditazin optical properties for expanding possibilities of photodynamic therapy

Biophysics and medical physics
  • Year: 2014
  • Issue: 3
  • 16
  • 6073
  • Pages: 110-117

Digital system of fluorescence visualization for antibacterial photodynamic therapy in dentistry

Experimental technique and devices
  • Year: 2015
  • Issue: 4
  • 409
  • 6179
  • Pages: 77-83

Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics

Conferences
  • Year: 2016
  • Issue: 1
  • 242
  • 5894
  • Pages: 98-108

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 87
  • 5805
  • Pages: 56-65

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 113
  • 5754
  • Pages: 66-76

Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction

Condensed matter physics
  • Year: 2011
  • Issue: 2
  • 0
  • 5607
  • Pages: 25-30

Laser diodes application to photodynamic therapy

Experimental technique and devices
  • Year: 2011
  • Issue: 2
  • 0
  • 5911
  • Pages: 80-84

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 4
  • 71
  • 1866
  • Pages: 32-43

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 30
  • 1193
  • Pages: 14-19

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 13
  • 1183
  • Pages: 101-107