Carrier lifetime in InAs / GaSb superlattice structures

Condensed matter physics

The time-resolved photoluminescence (PL) data are studied for strained-layer InAs / GaSb superlattice structures at different excitation powers. Photoluminescence and absorption spectra are obtained. The minority carrier lifetime is obtained from PL frequency response to sin-wave modulated excitation. Similar results follow from analysis of the time-resolved PL data. It has been concluded that the minority carrier lifetime is limited by Shockley-Read-Hall recombination.