SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    Latest issues

    Articles from section "Bulk properties of semiconductors"

    The influence of diamond origin on the properties of NV centers

    Bulk properties of semiconductors
    Yakovleva V.V.Likhachev K.V.Muzafarova M.V.Babunts R.A.Baranov P.G.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 22
    • 901
    • Pages: 27-32

    Lifetimes of electrons and holes in pure Si at temperature 40 mK

    Bulk properties of semiconductors
    Isakov I.D.Verbitskaya E.M.Eremin V.Fadeeva N.N.Eremin I.V.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 21
    • 854
    • Pages: 21-26

    Electric field-induced anisotropy of absorption and refraction of terahertz radiation in n-InSb

    Bulk properties of semiconductors
    Ustimenko R.V.Shalygin V.A.Karaulov D.A.Norvatov I.A.Melentyev G.A.Vinnichenko M.Ya.Firsov D.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 10
    • 851
    • Pages: 12-20

    Photoluminescence and photoreflectance of annealed HgCdTe films with high CdTe content

    Bulk properties of semiconductors
    Balashov V.S.Ruzhevich M.S.Chumanov I.V.Firsov D.D.Komkov O.S.Mynbaev K.D.Remesnik V.G.Varavin V.S.Mikhailov N.N.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 24
    • 925
    • Pages: 6-11

    Non-ideal experimental Berry phase in the topological insulator Bi2Se3 single crystal

    Bulk properties of semiconductors
    Fominykh B.M.Irkhin V.Yu.Perevalova A.N.Naumov S.V.Marchenkov V.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 42
    • 5245
    • Pages: 11-16

    Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

    Bulk properties of semiconductors
    Berdnikov V.S.Kavokin K.V.Kuznetsova M.S.Litvyak V.MBazhin P.S.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 63
    • 5282
    • Pages: 6-10

    Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

    Bulk properties of semiconductors
    Berdnikov V.S.Kuznetsova M.S.Kavokin K.V.Dzhioev R.I.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 40
    • 4718
    • Pages: 31-36

    Destruction of the conducting state by ac electric field in naphthalocyanine complexes

    Bulk properties of semiconductors
    Pshenichnyi V.A.Dubinina T.V.Drozdov K.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 23
    • 4483
    • Pages: 25-30

    Features of isovalent doping of gallium arsenide with bismuth ions

    Bulk properties of semiconductors
    Zdoroveyshchev D.A.Vikhrova O.V.Danilov Yu.A.Dudin Yu.A.Zdoroveyshchev A.V.Parafin A.E.Drozdov M.N.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 22
    • 5003
    • Pages: 20-24

    Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

    Bulk properties of semiconductors
    Melentyev G.A.Karaulov D.A.Kostromin N.A.Vinnichenko M.Ya.Firsov D.A.Shalygin V.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 69
    • 5109
    • Pages: 12-19

    Spin-dependent photon echo for an ensemble of three-level systems

    Bulk properties of semiconductors
    Zhilyakov V.L.Yugova I.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 48
    • 4606
    • Pages: 6-11

    Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

    Bulk properties of semiconductors
    Osinnykh I.V.Malin T.V.Zhuravlev K.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 25
    • 5847
    • Pages: 33-38

    Magnetoresistivity and Hall effect in Weyl semimetal WTe2

    Bulk properties of semiconductors
    Perevalova A.N.Fominykh B.M.Chistyakov V.V.Naumov S.V.Neverov V.N.Marchenkov V.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 112
    • 6312
    • Pages: 26-32

    Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy

    Bulk properties of semiconductors
    Litvyak V.MCherbunin R.V.Soldatenkov F.Yu.Kalevich V.K.Kavokin K.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 36
    • 6135
    • Pages: 20-25

    Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

    Bulk properties of semiconductors
    Petruk A.D.Kharin N.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 43
    • 5447
    • Pages: 14-19

    Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model

    Bulk properties of semiconductors
    Bogoslovskiy N.A.Petrov P.V.Averkiev N.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 52
    • 5509
    • Pages: 7-13