SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
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    Latest issues

    Articles from section "Bulk properties of semiconductors"

    The influence of diamond origin on the properties of NV centers

    Bulk properties of semiconductors
    Yakovleva V.V.Likhachev K.V.Muzafarova M.V.Babunts R.A.Baranov P.G.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 68
    • Pages: 27-32

    Lifetimes of electrons and holes in pure Si at temperature 40 mK

    Bulk properties of semiconductors
    Isakov I.D.Verbitskaya E.M.Eremin V.Fadeeva N.N.Eremin I.V.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 3
    • 72
    • Pages: 21-26

    Electric field-induced anisotropy of absorption and refraction of terahertz radiation in n-InSb

    Bulk properties of semiconductors
    Ustimenko R.V.Shalygin V.A.Karaulov D.A.Norvatov I.A.Melentyev G.A.Vinnichenko M.Ya.Firsov D.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 1
    • 71
    • Pages: 12-20

    Photoluminescence and photoreflectance of annealed HgCdTe films with high CdTe content

    Bulk properties of semiconductors
    Balashov V.S.Ruzhevich M.S.Chumanov I.V.Firsov D.D.Komkov O.S.Mynbaev K.D.Remesnik V.G.Varavin V.S.Mikhailov N.N.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 5
    • 79
    • Pages: 6-11

    Non-ideal experimental Berry phase in the topological insulator Bi2Se3 single crystal

    Bulk properties of semiconductors
    Fominykh B.M.Irkhin V.Yu.Perevalova A.N.Naumov S.V.Marchenkov V.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 38
    • 4465
    • Pages: 11-16

    Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

    Bulk properties of semiconductors
    Berdnikov V.S.Kavokin K.V.Kuznetsova M.S.Litvyak V.MBazhin P.S.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 57
    • 4456
    • Pages: 6-10

    Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

    Bulk properties of semiconductors
    Berdnikov V.S.Kuznetsova M.S.Kavokin K.V.Dzhioev R.I.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 36
    • 3981
    • Pages: 31-36

    Destruction of the conducting state by ac electric field in naphthalocyanine complexes

    Bulk properties of semiconductors
    Pshenichnyi V.A.Dubinina T.V.Drozdov K.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 22
    • 3792
    • Pages: 25-30

    Features of isovalent doping of gallium arsenide with bismuth ions

    Bulk properties of semiconductors
    Zdoroveyshchev D.A.Vikhrova O.V.Danilov Yu.A.Dudin Yu.A.Zdoroveyshchev A.V.Parafin A.E.Drozdov M.N.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 21
    • 4296
    • Pages: 20-24

    Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

    Bulk properties of semiconductors
    Melentyev G.A.Karaulov D.A.Kostromin N.A.Vinnichenko M.Ya.Firsov D.A.Shalygin V.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 67
    • 4388
    • Pages: 12-19

    Spin-dependent photon echo for an ensemble of three-level systems

    Bulk properties of semiconductors
    Zhilyakov V.L.Yugova I.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 46
    • 3930
    • Pages: 6-11

    Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

    Bulk properties of semiconductors
    Osinnykh I.V.Malin T.V.Zhuravlev K.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 23
    • 5157
    • Pages: 33-38

    Magnetoresistivity and Hall effect in Weyl semimetal WTe2

    Bulk properties of semiconductors
    Perevalova A.N.Fominykh B.M.Chistyakov V.V.Naumov S.V.Neverov V.N.Marchenkov V.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 111
    • 5637
    • Pages: 26-32

    Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy

    Bulk properties of semiconductors
    Litvyak V.MCherbunin R.V.Soldatenkov F.Yu.Kalevich V.K.Kavokin K.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 35
    • 5456
    • Pages: 20-25

    Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

    Bulk properties of semiconductors
    Petruk A.D.Kharin N.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 42
    • 4808
    • Pages: 14-19

    Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model

    Bulk properties of semiconductors
    Bogoslovskiy N.A.Petrov P.V.Averkiev N.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 50
    • 4889
    • Pages: 7-13