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Maxim Ya. Vinnichenko
Affiliation
Peter the Great St. Petersburg Polytechnic University
Photoinduced absorption in structures with Се/Si quantum dots
- Year: 2011
- Issue: 3
- 0
- 9398
- Pages: 46-50
Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells
- Year: 2012
- Issue: 3
- 0
- 9429
- Pages: 9-15
Optical absorption in Ge/Si quantum dots at different population densities of the dots states
- Year: 2012
- Issue: 4
- 0
- 9702
- Pages: 9-15
Investigation of photoditazin optical properties for expanding possibilities of photodynamic therapy
- Year: 2014
- Issue: 3
- 22
- 9649
- Pages: 110-117
Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation
- Year: 2016
- Issue: 4
- 88
- 9430
- Pages: 56-65
Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells
- Year: 2016
- Issue: 4
- 116
- 9554
- Pages: 66-76
Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction
- Year: 2011
- Issue: 2
- 0
- 9163
- Pages: 25-30
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 42
- 4696
- Pages: 14-19
Interband photoluminescence of InAs (P)/Si nanowires
- Year: 2023
- Volume: 16
- Issue: 1.3
- 34
- 4899
- Pages: 101-107
Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers
- Year: 2023
- Volume: 16
- Issue: 3
- 216
- 5281
- Pages: 29-38
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 67
- 4265
- Pages: 12-19
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3517
- Pages: 143-148
Photoinduced light absorption in Ge/Si quantum dots
- Year: 2024
- Volume: 17
- Issue: 1.1
- 43
- 4182
- Pages: 105-112
Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 2790
- Pages: 207-211
Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface
- Year: 2025
- Volume: 18
- Issue: 1.1
- 19
- 4020
- Pages: 58-66
Impact of geometry on semiconductor quantum dots optical properties
- Year: 2025
- Volume: 18
- Issue: 1.1
- 16
- 3741
- Pages: 88-94
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 48
- 4290
- Pages: 9-21
The effect of heating and drift of electrons in an electric field on the absorption and refraction of terahertz radiation in electronic indium antimonide
- Year: 2025
- Volume: 18
- Issue: 4
- 17
- 733
- Pages: 114-126