Photoinduced absorption in structures with Се/Si quantum dots

Atom physics and physics of clusters and nanostructures

Photoinduced optical absorption in undoped Ge/Si quantum dots structure has been studied in mid-infrared range under interband photoexcitation of nonequilibrium charge carriers. Photoinduced absorption spectra have polarization-dependent features related to intraband optical transition between discrete levels of holes energy spectrum. Absorption related to optical transitions from excited quantum dot states was observed for the first time in Ge/Si quantum dot structures.