Vorobjev Leonid E.
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- 2024, Volume 17 Issue 1
- 2023, Volume 16 Issue 4 Full text
- 2023, Volume 16 Issue 3.2 Full text
- 2023, Volume 16 Issue 3.1 Full text
Photoinduced absorption in structures with Се/Si quantum dots
- Year: 2011
- Issue: 3
- 0
- 5881
- Pages: 46-50
Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells
- Year: 2012
- Issue: 3
- 0
- 5666
- Pages: 9-15
Optical absorption in Ge/Si quantum dots at different population densities of the dots states
- Year: 2012
- Issue: 4
- 0
- 5916
- Pages: 9-15
Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
- Year: 2013
- Issue: 4
- 426
- 6298
- Pages: 109-114
Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation
- Year: 2016
- Issue: 4
- 87
- 5805
- Pages: 56-65
Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells
- Year: 2016
- Issue: 4
- 113
- 5754
- Pages: 66-76
Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction
- Year: 2011
- Issue: 2
- 0
- 5607
- Pages: 25-30