Latest issues
Igor Osinnykh
Affiliation
Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS; Novosibirsk State University
Novosibirsk, Russian Federation
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 24
- 5491
- Pages: 33-38
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 28
- 4694
- Pages: 43-48