2304-9782, 2618-8686, 2405-7223 St. Petersburg Polytechnic University Journal: Physics and Mathematics 17 1.1 2024 1-179
CNF RUS 6-11 0009-0007-0111-9213 Zhilyakov Vladimir Spin Optics Laboratory, St. Petersburg State University Yugova Irina i.yugova@spbu.ru
St. Petersburg, Russian Federation
 Spin-dependent photon echo for an ensemble of three-level systems We consider the action of a polarized rectangular laser pulse on a three-level system as a model of the interaction of electromagnetic radiation with matter. We managed to get the analytical solution for non-resonant excitation by light of a system with degenerate excited energy states without taking relaxation into account. The found analytical expressions were applied then to model the signal of a two-pulse photon echo from an ensemble of three-level systems. 10.18721/JPM.171.101 537.6 coherent dynamics computer modeling https://physmath.spbstu.ru/article/2024.72.1/
CNF RUS 12-19 Peter the Great St. Petersburg Polytechnic University Melentyev Grigori gamelen@spbstu.ru Peter the Great St. Petersburg Polytechnic University Karaulov Danila karaulov.da@edu.spbstu.ru
St. Petersburg, Russian Federation
 0009-0006-9763-2830 Kostromin Nikita Peter the Great St. Petersburg Polytechnic University Vinnichenko Maxim mvin@spbstu.ru J-6066-2013 35403302800 0000-0003-3947-4994 Peter the Great St. Petersburg Polytechnic University Firsov Dmitry firsov.da@spbstu.ru
Russia, 195251, St.Petersburg, Polytechnicheskaya, 29
 Peter the Great St. Petersburg Polytechnic University Shalygin Vadim shalygin@rphf.spbstu.ru Optical properties of GaN epitaxial layers in mid- and far-infrared ranges In this work, the transmission of microstructures based on gallium nitride with different doping levels in the mid- and far-infrared spectral ranges at T = 300 K was experimentally studied. The transmission of the studied structures in these spectral ranges was modeled using the transfer matrix method. It is shown that the contribution of the lattice, according to the single-phonon resonance model, and the contribution of free electrons, according to the Drude model, to the dielectric constant allows one to satisfactorily describe the optical properties of the studied microstructures up to a quantum energy of 300 meV. The absorption coefficient for CO2 laser radiation (photon energy 117 meV) has been calculated. It has been shown that in gallium nitride absorption on free electrons at a given photon energy can be observed experimentally at an electron concentration exceeding 6·1016 cm–3. The optimal thickness of GaN layers for experimental observation of the absorption modulation of CO2 laser radiation in electric field for different doping levels was determined. 10.18721/JPM.171.102 535.3 gallium nitride free electrons light transmission absorption mid-infrared spectral range terahertz spectral range https://physmath.spbstu.ru/article/2024.72.2/
CNF RUS 20-24 0000-0002-2877-4628 Zdoroveyshchev Daniil danielzdoroveishev@yandex.ru 0000-0002-4804-3216 Vikhrova Olga Danilov Yury danilov@nifti.unn.ru Dudin Yury ya-dudin@nifti.unn.ru 0000-0002-8379-2263 Zdoroveyshchev Anton zdorovei@nifti.unn.ru Parafin Alexey parafin@ipmras.ru Drozdov Mikhail drm@ipmras.ru Features of isovalent doping of gallium arsenide with bismuth ions The work shows the possibility of doping gallium arsenide with bismuth during ion implantation and the effect of rapid thermal and pulsed laser annealing on these structures. The results of a study of bismuth depth distribution profiles are presented in comparison with theoretical calculations. The influence of bismuth on the optical properties of gallium arsenide was investigated using transmittance and reflection spectroscopy methods. It has been shown that the introduction of bismuth leads to a decrease in the band gap of gallium arsenide. 10.18721/JPM.171.103 621.315.592 gallium arsenide bismuth doping ion implantation pulsed laser annealing rapid thermal annealing https://physmath.spbstu.ru/article/2024.72.3/
CNF RUS 25-30 0009-0003-0530-066X Pshenichnyi Vadim pshenichnyi.va17@physics.msu.ru 0000-0002-9970-7123 Dubinina Tatyana 0000-0001-8600-7761 Drozdov Konstantin Destruction of the conducting state by ac electric field in naphthalocyanine complexes It is shown that in naphthalocyanine films, conductivity occurs due to electron transport along metal nanowires. In an alternating electric field, reversible partial rupture of nanowires may take place. Active resistance for film with partial  nanowire ruptures is frequency dependent and can be more or less than that of film without ruptures. A model for this effect is proposed. The prediction of the response of a system to an external influence simplifies the use of materials for practical applications. 10.18721/JPM.171.104 537.31, 538.913 nanowires resistive switching alternating electric field https://physmath.spbstu.ru/article/2024.72.4/
CNF RUS 31-36 0009-0002-1428-3323 Berdnikov Vladimir 0000-0003-3836-1250 Kuznetsova Maria Spin Optics Laboratory, St. Petersburg State University Kavokin Kirill kkavokin@gmail.com
St. Petersburg, Russian Federation
 Dzhioev Roslan Dzhioev@orient.ioffe.ru Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers In this paper we present experimental study of electron-nuclear spin dynamics in GaAs bulk layers doped with Mn ions at temperature 4.2 K. The electron spin dynamics is experimentally investigated by measuring the degree of  polarization of photoluminescence in a transverse magnetic field (Hanle effect) and the recovery of the electron spin polarization in a longitudinal magnetic field (polarization recovery curve). To study nuclear spin dynamics, we use two-stage experimental protocol including optical cooling of nuclear spin system and measuring change of the polarisation degree of photoluminescence in different transverse magnetic fields. We show dependence of electron spin relaxation times on excitation power for three samples with different concentrations of shallow donors and acceptors. Electron spin relaxation times have been obtained as at the exciton transition as at the deep acceptor Mn transition. Also we show dependence of nuclear spin-lattice relaxation times T1 on value of external transverse magnetic field. 10.18721/JPM.171.105 538.958 semiconductors gallium arsenide spin spin dynamics spin relaxation optical orientation Hanle effect polarization https://physmath.spbstu.ru/article/2024.72.5/
CNF RUS 37-42 Kozodaev Dmitriy kozodaev@ntmdt.nl 0009-0003-0155-4208 Novikov Ivan ianovikov@stud.etu.ru 0000-0001-6500-5492 St. Petersburg Electrotechnical University "LETI" Moshnikov Vyacheslav vamoshnikov@mail.ru Investigation of nanosized structures using internal friction effect The goal of this work is to study electrically active defects in planar (Si-SiO2) and isoplanar (Si-SiO2-Si3N4) silicon electret structures by the internal friction Q–1 method. The Q–1 set with a reversed pendulum type design is used for research. The activation energies and frequency factors of thermoelastic processes were determined due to the displacement of peaks on the Q–1 relaxation spectra. Moreover, additional local maxima formed after electrification of structures were found on the temperature dependence Q–1. It is assumed that this may be due to the interaction of charged particles obtained as a result of irradiation in a corona discharge with capture centers, which are hydride Si-H and hydroxyl Si-OH groups, as well as with deep capture centers at the SiO2-Si3N4 interface. We confirmed that the developed complex research method for determining the main electrophysical parameters of electret structures based on silicon oxide and silicon nitride allows finding optimal approaches to electrifying Si-SiO2 and Si-SiO2-Si3N4 structures for their practical application as active elements of electret sensors and actuators. 10.18721/JPM.171.106 539.67 Internal friction Young’s Modulus electrets silicon oxide silicon nitride https://physmath.spbstu.ru/article/2024.72.6/
CNF RUS 43-48 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS; Novosibirsk State University Osinnykh Igor igor-osinnykh@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Malin Timur mal-tv@isp.nsc.ru
Novosibirsk, Russian Federation
 Milakhin Denis dmilakhin@isp.nsc.ru Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Zhuravlev Konstantin zhur@isp.nsc.ru
Novosibirsk, Russian Federation
 Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers In this paper, we present the results of the investigation of GaN-on-Si layers grown by the ammonia MBE technique within the technologically acceptable temperature range (775 °C–825 °C) by photoluminescence technique. The lowest value of the concentration of defects was obtained at a growth temperature of 825 °C. The increase in the concentration of defects in the film with decreasing growth temperature can be explained by the deviation from the  optimum growth temperature and consequently by the deterioration of the crystalline perfection of the GaN layers. 10.18721/JPM.171.107 535.37 GaN ammonia-MBE photoluminescence heterostructures point defects https://physmath.spbstu.ru/article/2024.72.7/
CNF RUS 49-54 0009-0006-6658-0601 Gogina Olga o_gogina@mail.ru 0000-0003-3084-3677 Petrov Yurii 0000-0001-6077-3679 Vyvenko Oleg 0000-0002-4817-1939 Kovalchuk Sviatoslav 0000-0003-1821-3429 Bolotin Kirill Electron irradiation as a method for controlling luminescence of hexagonal boron nitride Hexagonal boron nitride (hBN) is characterized by two main point defect-related luminescence bands with the peaks in visible, at 650 nm (1.9 eV), and UV, 320 nm (4 eV) spectral regions, which possess the properties of single photon emitters (SPE). We demonstrate that sufficiently long irradiation of thin hBN flakes in a scanning electron microscope with electron beam with energies from 5 keV to 20 keV and the flux equal or more than 1015 cm–2s–1 resulted in a drastic increase in the integral intensity of the 4 eV band previously associated with carbon-related defects. The effect of the irradiation induced luminescence enhancement increases with the decrease of the electron beam energy that corresponds well with the calculated energy losses in thin samples. An increase in the concentration of carbon-related defects introduced into the sample from surface carbon contaminated layer via recombination-enhanced migration or changes of the charge state of existing defects could be supposed to be mechanisms of the observed effect. The obtained results demonstrate the possibility of local control of UV SPE concentration in hBN. 10.18721/JPM.171.108 538.958 point defects cathodoluminescence scanning electron microscopy https://physmath.spbstu.ru/article/2024.72.8/
CNF RUS 55-61 Domoratsky Egor egor.domorackiy@mail.ru Zakharchenko Mikhail mikhailvzakh@gmail.com Saint Petersburg Electrotechnical University LETI Glinsky Gennady
Russia, 197376, St.Petersburg, Professor Popov street, 5
 Effects of resonant tunneling in GaAs/AlAs heterostructure We investigate the effects of resonant tunneling of the charge carriers of the Г8 zone in the GaAs/AlAs heterostructure within the framework of the effective mass method, taking into account complex character of the valence band dispersion law. The problem is solved by introducing Green’s function with parametric dependence on energy within the biorthogonal formalism of quantum theory. The effects imposed by the spin state of holes, as well as the effect of short-range interface corrections, are investigated. 10.18721/JPM.171.109 538.915 heterostructures hole tunneling resonant tunneling https://physmath.spbstu.ru/article/2024.72.9/
CNF RUS 62-67 St. Petersburg Electrotechnical University "LETI" Chumanov Ivan chumanov2000@yandex.ru
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Firsov Dmitrii d.d.firsov@gmail.com
St. Petersburg, Russian Federation
 Kolyada Dmitry St. Petersburg Electrotechnical University "LETI" Komkov Oleg oleg_sergeevich@mail.ru
St. Petersburg, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Skvortsov Ilya i.skvortsov@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Mashanov Vladimir mash@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Timofeev Vyacheslav Vyacheslav.t@isp.nsc.ru
Novosibirsk, Russian Federation
 Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy The work demonstrates the use of photomodulation FTIR spectroscopy to study structures containing epitaxial layers of GeSn and GeSiSn in the temperature range of 79–180 K. The photoreflectance method has enabled observation of direct interband transitions, and evaluation of the impact of temperature variation and mechanical strain on their energy values. 10.18721/JPM.171.110 538.958 semiconductors solid solutions FTIR spectroscopy photoreflectance method heterostructures silicon epitaxy https://physmath.spbstu.ru/article/2024.72.10/
CNF RUS 68-76 Peter the Great St. Petersburg Polytechnic University Adamov Roman roma.adamow@gmail.com Peter the Great St. Petersburg Polytechnic University Melentyev Grigori gamelen@spbstu.ru 0000-0002-8819-844X Podoskin Aleksandr 0000-0003-4851-3641 Slipchenko Sergey Ioffe Institute of RAS Sedova Irina irina@beam.ioffe.ru Sorokin Sergey sorokin@beam.ioffe.ru National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru J-6066-2013 35403302800 0000-0003-3947-4994 Peter the Great St. Petersburg Polytechnic University Firsov Dmitry firsov.da@spbstu.ru
Russia, 195251, St.Petersburg, Polytechnicheskaya, 29
 Peter the Great St. Petersburg Polytechnic University Shalygin Vadim shalygin@rphf.spbstu.ru Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping Comprehensive studies of the luminescence of p–i–n structures with 10 compensated GaAs/AlGaAs quantum wells have been performed. The studies were carried out in the terahertz (THz) and near-infrared (NIR) spectral ranges with both optical and electrical pumping of nonequilibrium charge carriers. The THz photoluminescence spectra revealed an emission line caused by electron transitions from the first size-quantization subband e1 to the ground levels of donors D1s. The photo- and electroluminescence spectra in the NIR range revealed an emission line caused by electron transitions from the D1s levels to the first subband of heavy holes hh1. These transitions provide effective depletion of the D1s levels and are therefore relevant for creating a THz emitter operating at e1–D1s transitions. At high injection currents in the p–i–n diode, lasing occurs at the D1s–hh1 transitions, which increases the efficiency of depletion of the D1s levels. It is shown that for a given optical pump power or injection current density, the overall rate of the D1s–hh1 transitions in the p–i–n structure with 10 QWs is significantly higher than in similar structure with 50 QWs. 10.18721/JPM.171.111 535.3, 535.4 quantum wells p–i–n-structures gallium arsenide aluminum arsenide impurities photoluminescence electroluminescence https://physmath.spbstu.ru/article/2024.72.11/
CNF RUS 77-82 0000-0002-4513-6345 Ruzhevich Maxim max.ruzhevich@niuitmo.ru Mynbaev Karim mynkad@mail.ioffe.ru Bazhenov Nikolai bazhnil.ivom@mail.ioffe.ru 0000-0002-9989-3843 Romanov Viacheslav romanovvv@mail.ioffe.ru Ioffe Institute Moiseev Konstantin mkd@iropt2.ioffe.ru
St. Petersburg, Russian Federation
 Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12 Electroluminescence of narrow-gap n-InAs/InAs1–ySby/p-InAsSbP heterostructures with the indium antimonide content in the active region y = 0.07–0.12 has been studied. A radiative recombination channel associated with the InAsSb/InAsSbP heterointerface has been discovered. The dependence of the type of this heterointerface on the actual composition of the barrier layer near the interface has been established. 10.18721/JPM.171.112 551.510.411 solid solutions InAsSb electroluminescence heterostructures https://physmath.spbstu.ru/article/2024.72.12/
CNF RUS 83-88 Khakhulin Semyon khsmn@ya.ru St. Petersburg Electrotechnical University "LETI" Firsov Dmitrii d.d.firsov@gmail.com
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Komkov Oleg oleg_sergeevich@mail.ru
St. Petersburg, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Timofeev Vyacheslav Vyacheslav.t@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Skvortsov Ilya i.skvortsov@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Mashanov Vladimir mash@isp.nsc.ru
Novosibirsk, Russian Federation
 0000-0001-9510-5427 Utkin Dmitry utkinde@isp.nsc.ru Polarized reflectance spectroscopy of aluminum nanoantennas on the surface of emitting GeSiSn/Si heterostructures The study presents an investigation of the optical properties of rectangular-shaped aluminum nanoantenna arrays formed on the surface of an emitting GeSiSn/Si heterostructure with multiple quantum wells. The positions of the localized surface plasmon resonance modes excited along the long (L) and short (S) sides of the examined nanoantennas are determined utilizing the technique of Fourier-transform infrared reflectance anisotropy spectroscopy. Experimental results demonstrate that both L- and S-modes are located in the near-infrared range, and as the lateral dimensions of the nanoantennas increase, the modes’ positions shift towards lower energies with an increase in the intensity of the resonance. The S-mode appears in the spectra as an overlay on the more pronounced L-mode with an intensity an order of magnitude lower. The geometry of the nanoantennas arrays with the resonance position near the photoluminescence peak of Ge0.84Si0.076Sn0.084/Si heterostructures (E ≈ 0.65 eV) is characterized. 10.18721/JPM.171.113 538.958 polarized reflectance reflectance anisotropy spectroscopy RAS aluminum nanoantennas localized surface plasmon resonance LSPR https://physmath.spbstu.ru/article/2024.72.13/
CNF RUS 89-94 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Sarypov Daniil d.sarypov@g.nsu.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Pokhabov Dmitriy A. pokhabov@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Pogosov Arthur pogosov@isp.nsc.ru
Novosibirsk, Russian Federation
 0000-0001-5668-7284 Egorov Dmitriy d.egorov@g.nsu.ru Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Zhdanov Evgeniy zhdanov@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Bakarov Askhat
Novosibirsk, Russian Federation
 Gurzhi effect in point contacts in GaAs Hydrodynamic electron transport through point contacts of different widths in two-dimensional electron gas in GaAs/AlGaAs heterostructure is studied. Effect Gurzhi, i.e., minimum in the temperature dependence of the point contact resistance, corresponding to the conductance exceeding the ballistic limit, is experimentally observed. The minimum is shown to be observed in case when electron-electron scattering length is comparable with the point contact width. Under this condition, electrons act as viscous fluid, that leads to the resistance reduction. The experimental data including the width dependence are consistent with the theoretical prediction of the viscous contribution to the point contact conductance. 10.18721/JPM.171.114 538.9 electron-electron scattering electron hydrodynamics viscous electron fluid https://physmath.spbstu.ru/article/2024.72.14/
CNF RUS 95-99 0000-0002-0724-6391 Mashinsky Konstantin konstantin-m92@yandex.ru 0000-0003-1303-6443 Popov Vyacheslav Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), RAS Fateev Denis fateevdv@yandex.ru
Saratov, Russian Federation
 Excitation of plasmon modes localized at the edge of a graphene rectangle by teraherz wave Excitation of edge plasmon modes in a graphene rectangle by an incident electromagnetic wave is predicted. The problem is solved using a self-consistent electromagnetic approach based on the method of integral equations developed by the authors. It is found that the frequencies of edge plasmon resonances depend on both the width and length of graphene rectangle. For a graphene rectangle having the aspect ratio of 1 micron by 200 microns, the frequencies of edge plasmon resonances lie in terahertz frequency range. 10.18721/JPM.171.115 621.315.592 edge plasmon terahertz graphene https://physmath.spbstu.ru/article/2024.72.15/
CNF RUS 100-104 0009-0008-1846-1979 Zhivopistsev Alexander Prokhorov General Physics Institute, RAS Romshin Alexey alex_31r@mail.ru
Moscow, Russian Federation
 Moscow Institute of Physics and Technology (MIPT) Gritsienko Alexander grits_alex@rambler.ru
Moscow, Russian Federation
 Lega Peter lega_peter@list.ru Vereshchagin Institute of High Pressure Physics RAS Bagramov Rustem bagramov@mail.ru
Moscow, Russian Federation
 Vereshchagin Institute of High Pressure Physics RAS Filonenko Vladimir vpfil@mail.ru
Moscow, Russian Federation
 Moscow Institute of Physics and Technology (MIPT) Vitukhnovsky Alexey alexei@sci.lebedev.ru
Moscow, Russian Federation
 Prokhorov General Physics Institute, RAS Vlasov Igor vlasov@nsc.gpi.ru
Moscow, Russian Federation
 Single photon emission of “silicon-vacancy” centers in nanodiamonds placed in cylindrical pits on a gold film In this paper, we study photon emission of single “silicon-vacancy” centers in HPHT-nanodiamonds on 1) a gold surface and 2) inside nanophotonic cavity which is cylindrical nanopit on a gold film. It was found that the saturation intensity of single SiV centers in the nanocavity increases by up to 3 times compared to similar diamonds on the gold surface, along with a twofold decrease in saturation power and a 15% reduction in lifetime. The obtained results are explained by the interaction of SiV centers with the surface plasmons in cylindrical nanopit in gold film, as well as by the narrow directivity of the emitter related to geometry factor of the plasmonic nanocavity. 10.18721/JPM.171.116 535-4 nanodiamonds color centers microcavities single photon emitters https://physmath.spbstu.ru/article/2024.72.16/
CNF RUS 105-112 0000-0003-4123-4375 Peter the Great St. Petersburg Polytechnic University Ustimenko Ratmir ustimenko_rv@spbstu.ru
St. Petersburg, Russian Federation
 Peter the Great St. Petersburg Polytechnic University Karaulov Danila karaulov.da@edu.spbstu.ru
St. Petersburg, Russian Federation
 Peter the Great St. Petersburg Polytechnic University Vinnichenko Maxim mvin@spbstu.ru National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru J-6066-2013 35403302800 0000-0003-3947-4994 Peter the Great St. Petersburg Polytechnic University Firsov Dmitry firsov.da@spbstu.ru
Russia, 195251, St.Petersburg, Polytechnicheskaya, 29
 Sarkisyan Hayk hayk.sarkisyan@rau.am 0000-0001-6594-6460 Sargsian Tigran tigran.sargsian@rau.am 0000-0001-6461-072X Hayrapetyan David david.hayrapetyan@rau.am Photoinduced light absorption in Ge/Si quantum dots Photoinduced absorption in nanostructures with doped Ge/Si quantum dots as well as in undoped structures, was studied. Spectra of photoinduced absorption at cryogenic temperatures under direct and indirect in real space  resonant interband pumping, as well as time-resolved spectra were obtained. Two high-energy peaks detected in the absorption spectra may be associated with intraband hole transitions from the ground and excited states of  quantum dots to the continuous spectrum. The low-energy peak corresponds to interlevel transitions of holes between the ground and excited states. The dynamics of the decay of high-energy peaks can be described in terms of fast and slow components associated with the capture of photoexcited carriers on the levels in a quantum dot. Structures with Ge/Si quantum dots can be used to develop mid-infrared detectors. 10.18721/JPM.171.117 535.3 quantum dots GeSi absorption time-resolved spectra https://physmath.spbstu.ru/article/2024.72.17/
CNF RUS 113-118 0009-0006-0923-1501 Peter the Great St. Petersburg Polytechnic University Kozko Ivan
St. Petersburg, Russian Federation
 0009-0005-0777-6746 Alferov University Karaseva Elizaveta
St. Petersburg, Russian Federation
 0009-0006-2988-5027 Sosnovitskaia Zlata 0000-0002-2497-653X Istomina Maria istomina_ms@almazovcentre.ru 0000-0001-5547-9387 Alferov University Fedorov Vladimir fedorov_vv@spbstu.ru 0000-0002-9658-5036 Alferov University Shmakov Stanislav
St. Petersburg, Russian Federation
 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots This research is devoted to study of the photosensitive properties of gallium phosphide epitaxial nanowires (NWs) decorated with carbon dots (CDs). The deposition of CDs facilitates the development of a new functional GaP/CDs material with electronic and optical characteristics distinct from those of the original pristine NWs. The photosensitivity of GaP NWs, both before and after the decoration, was assessed by analyzing their I-V characteristics and impedance spectra when subjected to light irradiation of ultraviolet (UV), visible, and infrared (IR) ranges. The findings reveal a significant photoresistive response of pristine GaP NWs when exposed to UV and blue light (390 nm and 470 nm wavelengths, correspondingly). In contrast, GaP NWs / CDs heterostructures exhibit a spectrally broader photoresistive response to light irradiation within the wavelength range of 390 to 850 nm. The results of this study highlight the potential use of the developed functional nanomaterial for fabricating photodetectors capable of operating across a wide spectral range, utilizing a relatively simple fabrication protocol. 10.18721/JPM.171.118 538.94 GaP nanowires carbon dots photodetector https://physmath.spbstu.ru/article/2024.72.18/
CNF RUS 119-124 0009-0005-0777-6746 Alferov University Karaseva Elizaveta
St. Petersburg, Russian Federation
 0009-0006-0923-1501 Peter the Great St. Petersburg Polytechnic University Kozko Ivan
St. Petersburg, Russian Federation
 0009-0003-4890-683X ITMO University Rider Maxim
St. Petersburg, Russian Federation
 0009-0003-7988-7520 ITMO University Kovova Mariia
St. Petersburg, Russian Federation
 0000-0001-9626-8543 ITMO University Zakharov Viktor
St. Petersburg, Russian Federation
 0000-0001-7521-3754 Alferov University, RAS Fedina Sergey fedina.serg@yandex.ru 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Temperature evolution of GaP nanowires photoelectronic properties This work is devoted to study photoelectric properties of GaP nanowires (NWs) modified by carbon nanodots (CDs). Photoelectric properties of samples were studied by electrochemical impedance spectroscopy (EIS) over a wide frequency range. Impedance spectra were shown in Nyquist plot in dark conditions and under ultraviolet (UV) illumination allowed to evaluate changes of active resistance of the NWs before and after modification with the CDs, in terms of resistance response. Temperature evolution of GaP NWs impedance spectra in the range from 25 to 205 °C before and after the modification was studied also in dark and UV conditions. The largest response reached 25% and was detected at room temperature in modified NWs. Heating of the samples lead to decreasing of response down to 25% with modified NWs, whereas for GaP the response did not exceed 13%. The result is interesting for processing of photosensitive detectors working in room temperature. 0.18721/JPM.171.119 538.975 nanowires GaP carbon nanodots electrochemical impedance spectroscopy https://physmath.spbstu.ru/article/2024.72.19/
CNF RUS 125-130 Alferov University Sharov Vladislav vl_sharov@mail.ru
St. Petersburg, Russian Federation
 0000-0002-8143-4606 Alekseev Prokhor 0000-0001-5547-9387 Alferov University Fedorov Vladimir fedorov_vv@spbstu.ru 0000-0001-9792-045X Peter the Great St. Petersburg Polytechnic University Mukhin Ivan muhin_is@spbstu.ru Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling Growth strategies for achieving highly-doped GaP nanowires are investigated. Eight nanowire arrays are synthesized under different growth parameters via molecular beam epitaxy with the use of silicon and beryllium as n- and p- dopants. Electrical conductivity of individual nanowires from each array is investigated via conductive atomic force microscopy. The obtained current-voltage characteristics are numerically analyzed, the impact of nanowire geometry, contact properties and doping on the conductivity is estimated. 10.18721/JPM.171.120 538.911 nanowires GaP gallium phosphide conductivity doping atomic force microscopy https://physmath.spbstu.ru/article/2024.72.20/
CNF RUS 131-136 Eghbali Amir eghbali.amir@phystech.edu Vyshnevyy Andrey vyshnevyi.aa@mipt.ru Quality factor enhancement of spherical resonators by radial anisotropy High-quality resonances in open systems have ubiquitous applications in nanophotonics. However, it is challenging to achieve high quality factor in compact resonators due to the limitations on the refractive index of materials. Recently a novel family of high index materials was discovered, i.e., van der Waals materials. In addition to record-high refractive indices, they feature strong negative optical anisotropy, therefore their promise for the use in nanoresonators is not evident. Motivated by the progress in fabrication of spherical nanoparticles from these materials, here we study the effect of radial anisotropy on the quality of homogeneous nanospheres that support the Mie resonances. Our study reveals that material anisotropy can enhance the quality factor of Mie resonances. In particular, we show that the quality factor of electric dipole mode of the nanosphere made of radially anisotropic material is up to 29% higher than that of the optically isotropic nanosphere which has the same refractive index. 10.18721/JPM.171.121 533.922 nanoresonators nanoparticles van der Waals materials giant optical anisotropy Mie resonance https://physmath.spbstu.ru/article/2024.72.21/
CNF RUS 137-142 0009-0008-4344-4863 Alferov University Nikolaeva Aleksandra
St. Petersburg, Russian Federation
 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 Kadinskaya Svetlana skadinskaya@bk.ru 0009-0007-9013-7973 Alferov University Markina Diana
St. Petersburg, Russian Federation
 Lendyashova Vera erilerican@gmail.com 0000-0002-4172-940X Alferov University Dvoretckaia Liliya 0009-0009-7051-8458 Alferov University Monastyrenko Anatoliy
St. Petersburg, Russian Federation
 0000-0002-2209-6483 Alferov University Kochetkov Fedor
St. Petersburg, Russian Federation
 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load This study presents zinc oxide (ZnO) microstructures encapsulated in a poly(dimethylsiloxane) (PDMS) polymer matrix for the fabrication of a flexible mechanical load sensor. The resistance and capacitance properties of the ZnO-PDMS membrane in the presence of mechanical load in the range of 0–500 g have been studied using electrochemical impedance spectroscopy. The obtained impedance spectra reveal a decrease in active resistance (R) with increasing load mass. This decrease is attributed to an increase in contact area between the ZnO crystals and the upper electrode, leading to enhanced conductivity of the ZnO-PDMS membrane. Apart from the resistive response, the sensor exhibits capacitive response. The volume fraction of ZnO and PDMS in the membrane has been estimated, and the electrical capacity of the sensor has been determined. The obtained results are found promising for fabrication of various applications in sensing, human health diagnostics, and wearable electronics. 10.18721/JPM.171.122 538.9 ZnO PDMS sensor https://physmath.spbstu.ru/article/2024.72.22/
CNF RUS 143-148 Peter the Great St. Petersburg Polytechnic University Kharin Nikita kharin.nikita66@gmail.com
St. Petersburg, Russian Federation
 Peter the Great St. Petersburg Polytechnic University Panevin Vadim pvyu@rphf.spbstu.ru Peter the Great St. Petersburg Polytechnic University Vinnichenko Maxim mvin@spbstu.ru 0000-0002-0048-7512 Peter the Great St. Petersburg Polytechnic University Norvatov Ilya norv2@mail.ru
St. Petersburg, Russian Federation
 0000-0001-5547-9387 Alferov University Fedorov Vladimir fedorov_vv@spbstu.ru J-6066-2013 35403302800 0000-0003-3947-4994 Peter the Great St. Petersburg Polytechnic University Firsov Dmitry firsov.da@spbstu.ru
Russia, 195251, St.Petersburg, Polytechnicheskaya, 29
 Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range The results of a study of near-infrared (IR) and terahertz photoluminescence in doped GaAs layers placed in a near-IR optical waveguide are presented. Terahertz radiation under optical interband pumping is associated with transitions of nonequilibrium electrons from the conduction band to impurity states. Stimulated interband near-IR emission involving impurity states was obtained. An accelerated increase in the integral intensity of terahertz radiation has been demonstrated at pump intensities exceeding the threshold for stimulated emission in the near-IR range. The increase in intensity is associated with the accelerated depopulation of the ground state of the impurity by stimulated emission. 10.18721/JPM.171.123 538.958 photoluminescence terahertz radiation impurity transition epitaxial layer bulk semiconductor stimulated emission https://physmath.spbstu.ru/article/2024.72.23/
CNF RUS 149-154 0009-0001-6796-4432 Hamoud Ghaithaa k.gaisaa@g.nsu.ru 0000-0002-6413-0969 Kamaev Gennadiy kamaev@isp.nsc.ru 0000-0001-5237-9014 Vergnat Michel michel.vergnat@univ-lorraine.fr Volodin Vladimir volodin@isp.nsc.ru Photocurrent in MIS structures based on germanosilicate films The photocurrent in metal-insulator-semiconductor (MIS) structures based on germanosilicate films on n-type silicon with a transparent top electrode made of indium tin oxide has been studied. The first structure contained a GeO[SiO2] layer as a dielectric, and the second structure contained an additional Ge layer 3 nm thick, separated from the silicon substrate by a tunnel-thin layer of SiO2. High photosensitivity was obtained for both structures, both as-deposited and after annealing at 500 °C for 30 minutes. A mechanism for the generation of photocurrent is proposed, based on the absorption of photons in a depletion region of silicon and tunneling of charge carriers through the dielectric. In the case of the second structure, an additional mechanism for the occurrence of photocurrent associated with the absorption of photons in the Ge layer is assumed. The studied MIS structures can be used in simple, inexpensive photodiodes that do not require the creation of p–n junctions. 10.18721/JPM.171.124 germanosilicate films MIS-structures photocurrent https://physmath.spbstu.ru/article/2024.72.24/
CNF RUS 155-159 Ioffe Institute Soldatenkov Fedor
St. Petersburg, Russian Federation
 Ivanov Anton a-e-ivano-v@yandex.ru Ioffe Institute Malevskiy Dmitriy dmalevsky@scell.ioffe.ru
St. Petersburg, Russian Federation
 Levin Sergey sergiolevin733@gmail.com High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb The article investigates the temperature dependences of the current–voltage characteristics and reverse recovery of high-voltage AlxGa1–xAs and AlxGa1–xAs1–ySby p–i–n diodes manufactured by liquid-phase epitaxy when heated to 350 °C. It was found that with an increase in the Al content in the base layers, the operating temperatures of the diodes increase from 250 °C at x = 0 to 350 °C at x ~ 0.45, while the forward voltage drops of the diodes also increase. It is shown that the use of small Sb additions in AlGaAs layers reduces the reverse recovery times of diodes by almost an order of magnitude, from 40–80 ns to 5–8 ns. 10.18721/JPM.171.125 681.782.473 AlGaAsSb heterostructure high-voltage p0–i–n0 junction diode liquid-phase epitaxy lattice mismatch reverse recovery of diodes https://physmath.spbstu.ru/article/2024.72.25/
CNF RUS 160-164 0009-0005-6836-4091 Mikhaylov Oleg oleg.mikhaylov.00@gmail.com 0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru
St. Petersburg, Russian Federation
 0000-0002-7632-3194 Alferov University Gudovskikh Alexander gudovskikh@spbau.ru 0000-0002-5226-1101 Ioffe Institute Terukov Evgenyi eug.terukov@mail.ioffe.ru
St. Petersburg, Russian Federation
 Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation In this work, we study the effect of irradiation as in low Earth orbits on heterojunction technology structures (p)a-Si:H/(n)c-Si. To compare the photoelectric properties, three samples were created: the original (without electron irradiation) and two irradiated ones with the fluence of irradiation of 5·1014 cm–2 and 1·1015 cm–2. Catastrophic deterioration of photoelectrical properties were observed for this irradiation: short-circuit current falls almost by two times, and open-circuit voltage drops by 150–200 mV. By measurements of deep-level transient spectroscopy, formation of A-center (V-O, vacancy-oxygen) with 0.16–0.17 eV in silicon wafer in bulk material were shown, and its concentration increases with growth of irradiation dose. Its arising leads to degradation of solar cells. 10.18721/JPM.171.126 08.1; 08.2; 08.3 solar cells heterojunction irradiation defects https://physmath.spbstu.ru/article/2024.72.26/
CNF RUS 165-170 0000-0003-4858-7544 Ioffe Institute Kalinovskii Vitaliy vitak.sopt@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0003-2500-1715 Ioffe Institute Maleev Nicolai maleev.beam@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0002-2181-5300 Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS Vasil’ev Alexey
St. Petersburg, Russian Federation
 0000-0003-1812-3714 Ioffe Institute Kontrosh Evgeniy kontrosh@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Tolkachev Ivan TolkachevIA@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Prudchenko Kseniia prudchenkokk@mail.ioffe.ru
St. Petersburg, Russian Federation
 Submicron Heterostructures for Microelectronics Research and Engineering Center, RAS Ustinov Victor info@ntcm-ras.ru
St. Petersburg, Russian Federation
 Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters A new type of thermally stable GaAs/AlGaAs tunnel diode with an intermediate i-layer is proposed as a connecting element between photoactive sub-elements in monolithic multijunction photoconverters. In the temperature range of (25–80) °C, the current-voltage characteristics for two types of n++-GaAs(δSi)/p++-Al0.4Ga0.6As(C) and n++-GaAs(δSi)/i-GaAs/ p++-Al0.4Ga0.6As:(C) structures of connecting tunnel diodes were studied. The temperature dependences of the peak tunneling current density – (Jp) and differential resistance – (Rd) were obtained. In the samples of tunnel diodes of the structure with an i-layer, an order of magnitude higher Jp values and an order of magnitude lower Rd values were obtained, with higher temperature stability than in the samples of the structure without an i-layer. The results obtained are useful in the development and creation of monolithic multijunction photoconverters of high-power laser radiation. 10.18721/JPM.171.127 621.315.592 tunnel diode photoactive p-n junctions multijunction laser radiation photoconverters current-voltage characteristics peak tunnel current density differential resistance https://physmath.spbstu.ru/article/2024.72.27/
CNF RUS 171-177 0000-0002-9856-3543 Matyunina Kristina matyunina.ks@gmail.com Lobachevsky State University of Nizhni Novgorod Nikolskaya Alena nikolskaya@nifti.unn.ru
Nizhni Novgorod, Russian Federation
 Kriukov Ruslan kryukov@unn.ru Institute for Physics of Microstructures RAS Yunin Pavel yunin@ipmras.ru
Afonino, Nizhny Novgorod region, Russian Federation
 Lobachevsky State University of Nizhni Novgorod Korolev Dmitry dmkorolev@phys.unn.ru
Nizhni Novgorod, Russian Federation
 Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix The regularities of ion synthesis of gallium oxide nanocrystalline inclusions by implantation of gallium and oxygen ions into dielectric Al2O3 films on silicon substrates and subsequent thermal annealing are considered. The composition of the implanted samples before and after annealing was investigated by X-ray photoelectron spectroscopy with layer-by-layer profiling. The formation of Ga-O chemical bonds was demonstrated, and after annealing gallium is predominantly in the fully oxidized state. According to X-ray diffraction data, the formation of β-Ga2O3 crystalline phase was confirmed. The study of photoluminescence of the synthesized samples revealed the presence of luminescence band, which is presumably caused by radiative recombination of donor-acceptor pairs. 10.18721/JPM.171.128 537.9 nanocrystals gallium oxide ion synthesis photoluminescence X-Ray photoelectron spectroscopy X-Ray diffraction https://physmath.spbstu.ru/article/2024.72.28/