Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
Authors:
Sharov V.A.Alekseev P.A.Fedorov V.V.Mukhin I.S.
Abstract:

Growth strategies for achieving highly-doped GaP nanowires are investigated. Eight nanowire arrays are synthesized under different growth parameters via molecular beam epitaxy with the use of silicon and beryllium as n— and p— dopants. Electrical conductivity of individual nanowires from each array is investigated via conductive atomic force microscopy. The obtained current-voltage characteristics are numerically analyzed, the impact of nanowire geometry, contact properties and doping on the conductivity is estimated.