SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorDmitriy A. Malevskiy
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    Latest issues
    Dmitriy A. Malevskiy
    Dmitriy A. Malevskiy
    Affiliation
    Ioffe Institute
    St. Petersburg, Russian Federation

    Estimation of optical diffuse properties of Fresnel lenses

    Experimental technique and devices
    Shvarts M.Z.Malevskiy D.A.Nakhimovich M.V.Pokrovskiy P.V.Sadchikov N.A.Soluyanov A.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 16
    • 5339
    • Pages: 478-483

    Power-communicating photo-receiving device

    Physical optics
    Kognovitskii S.O.Malevskiy D.A.Terukov E.I.Yakovlev S.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 17
    • 5488
    • Pages: 160-164

    High-temperature high-voltage p-i-n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 15
    • 3937
    • Pages: 155-159

    The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range

    Condensed matter physics
    Kozlovski V.V.Lebedev A.A.Kuzmin R. A.Malevskiy D.A.Levinshtein M. E.Oganesjan G.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1
    • 65
    • 5322
    • Pages: 9-20

    Optimizing the front contact grid parameters of рhotovoltaic laser power converters

    Optoelectronic and nanoelectronic devices
    Malevskaya A.D.Mintairov M.A.Evstropov V.V.Malevskiy D.A.Malevskaya A.V.Kalyuzhniy N.A.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 15
    • 4208
    • Pages: 111-116

    Dependence of static and dynamic characteristics of high-voltage pulsed p-i-n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Pugovkin A.A.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 7
    • 4361
    • Pages: 140-144

    Modeling the current-voltage characteristics and optimizing the laser-powered photovoltaic converters with a spot-type rear contact

    Optoelectronic and nanoelectronic devices
    Malevskaya A.D.Mintairov M.A.Evstropov V.V.Malevskiy D.A.Malevskaya A.V.Mintairov S.A.Kalyuzhniy N.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 1
    • 442
    • Pages: 123-128