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- 2026,Volume 19Issue 1.1 Full text
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- 2025,Volume 18Issue 4.1 Full text
- 2025,Volume 18Issue 4
High-temperature high-voltage p-i-n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 14
- 3627
- Pages: 155-159
Dependence of static and dynamic characteristics of high-voltage pulsed p-i-n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 7
- 4030
- Pages: 140-144

