SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorAnton E. Ivanov
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    Latest issues
    Anton E. Ivanov
    Anton E. Ivanov

    A comprehensive study of electroluminescence and temperature distribution of «UX:3» AlInGaN LED

    Physical electronics
    Ivanov A.E.Aladov A.V.Chernyakov A.E.Zakgeim A.L.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 15
    • 6224
    • Pages: 142-146

    Comprehensive study of the power capabilities of UV-C LEDs in pulsed and continuous modes

    Condensed matter physics
    Ivanov A.E.Chernyakov A.E.Zakgeim A.L.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 11
    • 5337
    • Pages: 167-171

    Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm

    Heterostructures, superlattices, quantum wells
    Talnishnikh Nadezhda A.Ivanov A.E.Shabunina E.I.Shmidt N.P.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 19
    • 5294
    • Pages: 85-89

    Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

    Optoelectronic and nanoelectronic devices
    Ivanov A.E.Talnishnikh Nadezhda A.Chernyakov A.E.Zakgeim A.L.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 31
    • 5612
    • Pages: 170-175

    High-temperature high-voltage p-i-n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 16
    • 4197
    • Pages: 155-159

    Competing processes in nitride alloys in MQWs of LEDs

    Physical electronics
    Ivanov A.E.Chernyakov A.E.Talnishnikh Nadezhda A.Shabunina E.I.Shmidt N.P.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 8
    • 3278
    • Pages: 177-181

    Dependence of static and dynamic characteristics of high-voltage pulsed p-i-n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Pugovkin A.A.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 8
    • 4571
    • Pages: 140-144