Chernyakov Anton E.
  • Affiliation
    Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS
  • Russia, 194021, St.Petersburg, Polytechnicheskaya, 26

Type LED dynamically controlled light sources for novel lighting technology

Experimental technique and devices
  • Year: 2014
  • Issue: 4
  • 463
  • 6141
  • Pages: 38-47

Thermal resistanсe and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes

Experimental technique and devices
  • Year: 2015
  • Issue: 2
  • 347
  • 5769
  • Pages: 74-83

A study of thermal regime in the high-power LED arrays

Experimental technique and devices
  • Year: 2018
  • Volume: 11
  • Issue: 3
  • 26
  • 6405
  • Pages: 39-51

Hardware-software complex for characterization of a person’s functional status on exposure to light with the varied spectral color parameters

Experimental technique and devices
  • Year: 2019
  • Volume: 12
  • Issue: 3
  • 39
  • 5056
  • Pages: 63-77

Optimization of surgical field illumination to maximize the contrast when biological objects being visualized

Experimental technique and devices
  • Year: 2019
  • Volume: 12
  • Issue: 4
  • 38
  • 5212
  • Pages: 79-88

A comprehensive study of electroluminescence and temperature distribution of “UX:3” AlInGaN LED

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 7
  • 1698
  • Pages: 142-146

Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 10
  • 1260
  • Pages: 119-125

Comprehensive study of the power capabilities of UV-C LEDs in pulsed and continuous modes

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 5
  • 1175
  • Pages: 167-171

Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 17
  • 1353
  • Pages: 70-76

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 21
  • 1410
  • Pages: 170-175