SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorAndrey F. Tsatsulnikov
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    Latest issues
    Andrey F. Tsatsulnikov
    Andrey F. Tsatsulnikov
    Affiliation
    Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS

    Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures

    Condensed matter physics
    Chernysheva E.A.Sakharov A.V.Cherkashin N.A.Lundin Vsevolod V.Tsatsulnikov A.F.
    • Year: 2012
    • Issue: 2
    • 0
    • 9433
    • Pages: 32-36

    Type LED dynamically controlled light sources for novel lighting technology

    Experimental technique and devices
    Valjukhov V.P.Aladov A.V.Zakgeim A.L.Chernyakov A.E.Tsatsulnikov A.F.
    • Year: 2014
    • Issue: 4
    • 470
    • 10458
    • Pages: 38-47

    The wireless network of controlled energy-effective LED lighting sources

    Experimental technique and devices
    Aladov A.V.Valjukhov V.P.Demin S.V.Zakgeim A.L.Tsatsulnikov A.F.
    • Year: 2015
    • Issue: 1
    • 373
    • 10138
    • Pages: 50-60

    Optimization of InGaN-based luminescent heterostructures by genetic algorithm

    Condensed matter physics
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Tsatsulnikov A.F.Ustinov V.M.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 27
    • 6031
    • Pages: 21-24

    2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

    Atom physics and physics of clusters and nanostructures
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Tsatsulnikov A.F.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 33
    • 5193
    • Pages: 380-384

    Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

    Structure growth, surface, and interfaces
    Kelner O.A.Tsatsulnikov A.F.Nikolaev A.E.Zavarin E.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 35
    • 5189
    • Pages: 50-54

    Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

    Heterostructures, superlattices, quantum wells
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Nikitina E.V.Tsatsulnikov A.F.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 25
    • 4372
    • Pages: 46-51

    Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures

    Atom physics and physics of clusters and nanostructures
    Masyutin D,A.Rudnev A.A.Moiseev E.I.Vainilovich A.G.Lutsenko E.V.Tsatsulnikov A.F.Sakharov A.V.Arteev D.S.Nikolaev A.E.Pivovarova A.A.Zavarin E.E.Il'inskaya N.D.Markov L.K.Smirnova I.P.Kryzhanovskaya N.V.Zhukov A.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 13
    • 1164
    • Pages: 125-128

    Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry

    Atom physics and physics of clusters and nanostructures
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Filimonov A.V.Tsatsulnikov A.F.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 9
    • 1019
    • Pages: 143-147

    Optical properties of disk microresonators based on wide-bandgap III-N materials

    Physical optics
    Komarov S.D.Vainilovich A.G.Feigin G.A.Sakharov A.V.Nikolaev A.E.Ivanov K.A.Moiseev E.I.Kryzhanovskaya N.V.Nikitina E.V.Tsatsulnikov A.F.Lutsenko E.V.Zhukov A.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 6
    • 999
    • Pages: 209-213

    Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors

    Optoelectronic and nanoelectronic devices
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Rodin S.N.Tsatsulnikov A.F.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 2
    • 438
    • Pages: 129-133