Evgenii E. Zavarin
Evgenii E. Zavarin
Affiliation
Ioffe Institute

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 27
  • 5833
  • Pages: 21-24

2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 32
  • 4998
  • Pages: 380-384

Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 35
  • 4977
  • Pages: 50-54

Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

Heterostructures, superlattices, quantum wells
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 24
  • 4158
  • Pages: 46-51

Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 13
  • 965
  • Pages: 125-128

Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 9
  • 810
  • Pages: 143-147

Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 1
  • 208
  • Pages: 129-133