Latest issues
- 2026, Volume 19 Issue 1
- 2025, Volume 18 Issue 4.1 Full text
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots
- Year: 2022
- Volume: 15
- Issue: 3.2
- 62
- 6896
- Pages: 25-30
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 5853
- Pages: 31-35
Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board
- Year: 2022
- Volume: 15
- Issue: 3.3
- 33
- 5393
- Pages: 163-166
The investigation of optical coupling of microlasers with tapered fiber
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 6039
- Pages: 167-170
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 5627
- Pages: 260-264
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 5679
- Pages: 311-314
Integrated optical transceiver based on III-V microdisk laser and photodiode
- Year: 2022
- Volume: 15
- Issue: 3.3
- 29
- 5479
- Pages: 371-375
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 34
- 5319
- Pages: 22-27
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 26
- 4942
- Pages: 153-157
Thermal characteristics of III-V microlasers bonded onto silicon board
- Year: 2023
- Volume: 16
- Issue: 1.2
- 34
- 5021
- Pages: 108-113
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 48
- 5242
- Pages: 114-120
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 68
- 5546
- Pages: 179-184
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 4769
- Pages: 157-162
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 4347
- Pages: 64-68
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
- Year: 2023
- Volume: 16
- Issue: 3.2
- 21
- 4890
- Pages: 50-55
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 4452
- Pages: 255-260
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 3138
- Pages: 38-42
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 19
- 3112
- Pages: 79-83
Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 24
- 3251
- Pages: 233-237
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 17
- 2586
- Pages: 143-147
Mode leakage into substrate in microdisk lasers
- Year: 2024
- Volume: 17
- Issue: 3.2
- 19
- 2801
- Pages: 212-216
Ordered GaAs NW growth on Si (111) substrates modified by two-step FIB treatment
- Year: 2025
- Volume: 18
- Issue: 3.1
- 10
- 693
- Pages: 19-22
Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 11
- 773
- Pages: 125-128
Optical properties of disk microresonators based on wide-bandgap III-N materials
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 618
- Pages: 209-213
Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 600
- Pages: 237-241
Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 598
- Pages: 278-282
Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 628
- Pages: 95-98
Microdisk lasers with a bridge contact pad formed by wet chemical etching
- Year: 2025
- Volume: 18
- Issue: 3.2
- 1
- 617
- Pages: 24-28
Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region
- Year: 2025
- Volume: 18
- Issue: 3.2
- 4
- 571
- Pages: 29-32
Spectral composition of radiation from microlaser coupled to waveguide
- Year: 2025
- Volume: 18
- Issue: 3.2
- 2
- 543
- Pages: 200-204