Publication schedule
  • №1 March 2023
    Submission deadline: 20 January 2023
Shandyba Nikita A.

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 6
  • 343
  • Pages: 36-41

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 4
  • 348
  • Pages: 42-47

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 8
  • 335
  • Pages: 48-53

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 10
  • 369
  • Pages: 54-58

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 10
  • 339
  • Pages: 59-63

Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 4
  • 314
  • Pages: 315-319