Latest issues
Effect of ion dose and accelerating voltage during focused ion beam Si (111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 5288
- Pages: 79-83
Nanooscillators based on carbon whiskers for detectors of optomechanical effects
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 5095
- Pages: 182-186
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 5872
- Pages: 341-345
Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling
- Year: 2024
- Volume: 17
- Issue: 1.1
- 23
- 4167
- Pages: 125-130
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si (111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 21
- 3728
- Pages: 28-33
Numerical modal analysis of GaP optical microcavity
- Year: 2024
- Volume: 17
- Issue: 3.1
- 31
- 3959
- Pages: 115-119
Polarized Raman scattering in strained GaN nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 11
- 4407
- Pages: 83-87
Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps
- Year: 2025
- Volume: 18
- Issue: 3.1
- 11
- 1455
- Pages: 30-35
Investigation of second harmonic generation in spherical mesoporous Si/SiO2 nanoparticles on gold
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 1253
- Pages: 191-194
Photoluminescence control of WSe₂ monolayers integrated with plasmon nanobumps via strain engineering
- Year: 2026
- Volume: 19
- Issue: 1.1
- 11
- 713
- Pages: 56-63
Role of the buffer layer on the mechanical strength of nanowire-substrate interface
- Year: 2026
- Volume: 19
- Issue: 1.1
- 7
- 672
- Pages: 75-80

